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Shenzhen Mingjiada company supplies new original power management (LMG3425R030RQZR) LMG3425R050RQZR 600V GaN IC

Product model: LMG3425R030RQZR/LMG3425R050RQZR

Brand: TI

Year: latest 21+

Package: VQFN54

LMG3425R030 600V 30mΩ GaN FET with Integrated Driver, Protection and Temperature Reporting and Ideal Diode Mode

LMG3425R050 600V 50mΩ GaN FET with integrated driver, protection, temperature reporting and ideal diode mode

Product Features

Compliant with JEDEC JEP180 standard for hard switching topologies

600-V GaN-on-Si FET with integrated gate driver

Integrated high precision gate bias voltage

200V/ns CMTI

2.2MHz switching frequency

30 V/ns to 150 V/ns slew rate for optimized switching performance and EMI mitigation

Operates from 7.5V to 18V Supply

strong protection

Cycle-by-cycle overcurrent and latched short-circuit protection with less than 100 ns response time

Withstands 720V surge when hard switching

Self-protection against internal overtemperature and UVLO monitoring

Advanced Power Management

Digital temperature PWM output

Ideal Diode Mode Reduces Third Quadrant Losses in LMG3425R030

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