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IPG20N04S4L-11 - Infineon Automotive-Grade Dual N-Channel MOSFET Product Description:  

The IPG20N04S4L-11 is an automotive-grade dual N-channel enhancement-mode power MOSFET from Infineon, part of the OptiMOS™-T2 series, packaged in a PG-TDSON-8-4 package (5×6mm), featuring ultra-low on-resistance (11.6mΩ) and a 40V drain-source voltage, making it suitable for automotive electronics, industrial control, and light-load switching applications.

Key Features:

Dual N-channel design: Integrates two independent MOSFETs, saving PCB space and enhancing system integration.

Ultra-low on-resistance: 11.6mΩ (typical) @ 10V, 17A, significantly reducing power loss.

High current capability: Continuous drain current up to 20A, suitable for high-power switching applications.

Automotive-grade certification:

Compliant with AEC-Q101 standards, supporting a wide temperature operating range of -55°C to +175°C.

MSL1 peak reflow soldering temperature up to 260°C, meeting automotive manufacturing process requirements.  

Low gate charge (26 nC @ 10V), optimising high-frequency PWM control efficiency.  

100% avalanche testing, enhancing device reliability under transient high-voltage conditions.  

Compliant with RoHS standards, environmentally friendly lead-free design.  

Product advantages:

Dual Super S08 can replace multiple DPAKs, achieving significant PCB area savings and system-level cost reduction.  

Bond wire diameter of 200 microns, supporting currents up to 20 amps  

Larger source lead frame connection for bond wire connections  

Package: PG-TDSON-8-4  

Same thermal and electrical performance as DPAK with the same chip size.

Exposed pad provides excellent thermal conductivity performance (depending on chip size)

Two N-channel MOSFETs integrated into a single package, with two independent lead frames

Technical Specifications:

Product Type: MOSFET

Package/Case: TDSON-8

Transistor Polarity: N-Channel

Number of Channels: 2 Channels

Vds-Drain-Source Breakdown Voltage: 40 V

Id - Continuous Drain Current: 20 A  

Rds On - Drain-Source On-Resistance: 11.6 mOhms  

Vgs - Gate-Source Voltage: -16 V, +16 V  

Vgs th - Gate-Source Threshold Voltage: 1.7 V  

Qg - Gate Charge: 26 nC

Minimum operating temperature: -55°C

Maximum operating temperature: +175°C

Pd - Power dissipation: 41 W

Mingjiada Electronics Supply Information

Shenzhen Mingjiada Electronics Co., Ltd. stocks the IPG20N04S4L-11 automotive-grade MOSFET. The company is committed to providing customers with genuine original factory electronic components, ensuring product quality and reliability. With a comprehensive inventory management and logistics system, Mingjiada Electronics can quickly respond to customer needs and provide timely supply services. Customers with specific requirements are welcome to contact Mingjiada Electronics for detailed product information and quotes.

Contact Information:  

Phone: +86 13410018555 (Mr. Chen)  

Email: sales@hkmjd.com  

Website: www.hkmjd.com