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Infineon SiC MOSFET IMZ120R140M1H 1200V CoolSiC in TO-247-4 package

Infineon SiC MOSFET IMZ120R140M1H 1200V CoolSiC in TO-247-4 package

Source:our siteTime:2022-08-22Views:

Shenzhen Mingjiada Electronics Co., Ltd. sells Infineon SiC MOSFET IMZ120R140M1H/IMZ120R140M1HXKSA1 TO-247-4 package 1200V CoolSiC

Shenzhen Mingjiada Electronics Co., Ltd. sells Infineon SiC MOSFET IMZ120R140M1H/IMZ120R140M1HXKSA1 TO-247-4 package 1200V CoolSiC


Supply Model: IMZ120R140M1H/IMZ120R140M1HXKSA1

Lot number: 21+

Description: Through Hole N Channel 1200 V 19A(Tc) 94W(Tc) PG-TO247-4-1


Specification

Series CoolSiC™

Packaging Tube

FET type N channel

Technology SiCFET (Silicon Carbide)

Drain-source voltage (Vdss) 1200 V

Current at 25°C - Continuous Drain (Id) 19A (Tc)

Driving Voltage (Max Rds On, Min Rds On) 15V, 18V

On-resistance (max) at various Id, Vgs 182 milliohms @ 6A, 18V

Vgs(th) (max) at different Id 5.7V @ 2.5mA

Gate charge (Qg) (max) at different Vgs 13 nC @ 18 V

Vgs (max) +23V, -7V

Input Capacitance (Ciss) at Vds (max) 454 pF @ 800 V

FET function -

Power Dissipation (Maximum) 94W (Tc)

Operating temperature -55°C ~ 175°C (TJ)

Mounting Type Through Hole

Supplier Device Package PG-TO247-4-1

Package/Enclosure TO-247-4

Feature description

Best-in-class switching and conduction losses

Reference high threshold voltage, Vth > 4 V

0V turn-off gate voltage for simple and easy gate drive

Wide gate-source voltage range

Low loss and robust body diode for hard commutation

Switch turn-off losses independent of temperature

Drive source pins to optimize switching performance


Application Field

Uninterruptible Power Supply (UPS)

Electric vehicle fast charging

Solar System Solutions


Contact us:

Tel: +8613410018555

Email: sales@hkmjd.com

Company home page: www.hkmjd.com

Supply TO247-3 package IMW120R007M1H, IMW120R007M1HXKSA1 trench silicon carbide MOSFET Return to
column Acquired Infineon product IMZ120R140M1HXKSA1 1200V trench SiC MOSFET

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