sales@hkmjd.com
Service Telephone:86-755-83294757
Supply TO247-3 package IMW120R007M1H, IMW120R007M1HXKSA1 trench silicon carbide MOSFET
Mingjiada company supplies new original TO247-3 package IMW120R007M1H, IMW120R007M1HXKSA1 trench silicon carbide MOSFET
Mingjiada company supplies new original TO247-3 package IMW120R007M1H, IMW120R007M1HXKSA1 trench silicon carbide MOSFET
Description: CoolSiC™ 1200 V, 7 mΩ SiC trench MOSFET in TO247-3 package.
Specification
FET type N channel
Technology SiCFET (Silicon Carbide)
Drain-source voltage (Vdss) 1200 V
Current at 25°C - Continuous Drain (Id) 225A (Tc)
Driving Voltage (Max Rds On, Min Rds On) 15V, 18V
On-resistance (max) at various Id, Vgs 9.9 milliohms @ 108A, 18V
Vgs(th) (max) at different Id 5.2V @ 47mA
Gate charge (Qg) (max) at various Vgs 220 nC @ 18 V
Vgs (max) +20V, -5V
Input Capacitance (Ciss) at Vds (Maximum) 9170 nF @ 25 V
FET function -
Power Dissipation (Maximum) 750W (Tc)
Operating temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3
Package/Enclosure TO-247-3
Application
battery formation
Electric vehicle fast charging
Motor Control and Drive
Photovoltaic energy system solutions
Uninterruptible Power Supply (UPS)
Contact Details:
Contact: Mr. Chen
Email: sales@hkmjd.com
Time:2024-11-16
Time:2024-11-16
Time:2024-11-16
Time:2024-11-16
Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
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