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Infineon 1EDI3033AS Automotive Single Channel High Voltage Gate Driver For SiC MOSFET

Shenzhen Mingjiada Electronics Co., Ltd., as a leading domestic supplier of electronic components, has been consistently supplying the Infineon 1EDI3033AS automotive-grade single-channel high-voltage gate driver, providing an optimal driving solution for SiC MOSFET applications.

Overview of the 1EDI3033AS Gate Driver

The Infineon 1EDI3033AS is a high-performance single-channel isolated gate driver specifically designed for silicon carbide (SiC) MOSFETs. It employs advanced core-less transformer (CT) isolation technology to provide safe and reliable drive signals for high-voltage power switches. The device complies with the AEC-Q100 automotive-grade certification standard, ensuring stable operation in harsh automotive electronic environments. It is an ideal choice for applications such as electric drive systems in new energy vehicles, on-board chargers (OBC), and DC-DC converters.

The 1EDI3033AS features an isolation voltage of up to 5 kVrms and a peak drive current of ±10 A, enabling fast switching of SiC MOSFETs and fully leveraging their high-frequency and high-efficiency advantages. Compared to traditional isolation solutions based on optocouplers or pulse transformers, the 1EDI3033AS employs core-less transformer technology, which offers lower propagation delay (typical value of 25 ns) and higher common-mode transient immunity (CMTI > 150 kV/μs), ensuring stable system operation even in high-noise environments.

Core technical features of the 1EDI3033AS

The Infineon 1EDI3033AS gate driver integrates multiple innovative technologies, giving it a significant advantage in the SiC MOSFET driver field. The device uses a compact DSO-8 package with dimensions of just 5 mm × 6.1 mm, making it ideal for space-constrained automotive electronics applications. It supports a wide operating voltage range from 15V to 30V, compatible with various system power supply designs, and includes under-voltage lockout (UVLO) protection to prevent unintended operation under abnormal voltage conditions.

In terms of drive capability, the 1EDI3033AS provides ±10A peak output current, enabling rapid charging and discharging of the SiC MOSFET's gate capacitance to achieve nanosecond-level switching speeds. This feature is crucial for fully leveraging the high-frequency advantages of SiC devices, effectively reducing switching losses and improving system efficiency. The driver integrates an active Miller clamping function internally, preventing unintended conduction of SiC MOSFETs caused by the Miller effect under high dv/dt conditions, significantly enhancing system reliability.

Isolation performance is another key highlight of the 1EDI3033AS. The device employs Infineon's patented core-less transformer technology, achieving enhanced isolation of 5 kVrms (compliant with UL 1577 standards) and common-mode transient immunity (CMTI) exceeding 150 kV/μs. This high level of isolation performance is particularly important for high-voltage systems (such as 800V electric vehicle platforms), effectively preventing signal interference between high-side and low-side circuits and ensuring stable system operation under extreme conditions.

The 1EDI3033AS also features comprehensive protection functions, including under-voltage lockout (UVLO), over-temperature protection, and short-circuit protection. These protection mechanisms activate promptly when system abnormalities occur, preventing SiC MOSFETs from being damaged due to overvoltage, overcurrent, or overheating. The driver operates within a wide temperature range of -40°C to +125°C, fully meeting the environmental requirements of automotive electronics applications.

Perfect Matching of the 1EDI3033AS with Silicon Carbide MOSFETs

The combination of the Infineon 1EDI3033AS gate driver and SiC (CoolSiC™) MOSFETs represents the cutting edge of power electronics technology. SiC MOSFETs offer higher switching frequencies, lower conduction losses, and higher operating temperatures compared to traditional silicon-based IGBTs. However, to fully leverage these advantages, a specially optimised gate driver is essential.

The 1EDI3033AS has been specifically optimised to meet the unique drive requirements of SiC MOSFETs. SiC devices typically require higher gate drive voltages (typically +18V/-3V to +20V/-5V) to ensure full conduction and reliable turn-off, and the 1EDI3033AS's adjustable output voltage perfectly meets this requirement. Additionally, the gate oxide layer of SiC MOSFETs is more sensitive to voltage stress, and the precise gate voltage control provided by the 1EDI3033AS can effectively extend device lifespan.

In terms of switching characteristics, the combination of the 1EDI3033AS and SiC MOSFETs achieves nanosecond-level switching speeds, significantly reducing switching losses. Test data shows that the 1200V CoolSiC™ MOSFET module driven by the 1EDI3033AS reduces switching losses by over 50% compared to traditional silicon-based IGBTs, improving system efficiency by 3-5%. This translates to significant energy savings and extended range for high-power applications such as electric vehicle drive systems.

Thermal management is also a critical consideration in SiC applications. The 1EDI3033AS supports high-temperature operating environments up to 175°C, perfectly matching the high-temperature characteristics of CoolSiC™ MOSFETs. This high-temperature compatibility enables systems to use smaller heat sinks or higher power density designs, helping to reduce system size and weight, particularly suitable for space-constrained automotive electronics applications.

Applications of the 1EDI3033AS in new energy vehicles

New energy vehicles are one of the most important application areas for the 1EDI3033AS gate driver. As electric vehicles transition to 800V high-voltage platforms, SiC power devices, with their high-voltage, high-temperature, and high-frequency characteristics, have become the preferred choice for electric drive systems. The 1EDI3033AS, specifically designed for SiC MOSFETs, plays a crucial role in this transformation.

In main drive inverter applications, the 1EDI3033AS is used to drive CoolSiC™ MOSFET power modules, enabling efficient conversion of battery DC power to motor AC power. Compared to traditional silicon-based solutions, SiC inverters can improve efficiency by 3-5%, which means that electric vehicles can achieve a 5-8% increase in range with the same battery capacity. The 1EDI3033AS's high drive capability and fast response characteristics ensure high-speed switching of SiC MOSFETs, while its robust protection features enhance system reliability, meeting the stringent requirements of automotive electronics.

On-board chargers (OBC) are another important application scenario. The 1EDI3033AS driving SiC MOSFETs enables higher power density and more efficient AC-DC conversion, supporting 11kW or even 22kW on-board charging. Its compact package size is particularly suitable for space-constrained automotive electronic environments, while its high isolation voltage ensures safe isolation between the high-voltage side and low-voltage side, meeting automotive electronic safety standards.

In DC-DC converters, the combination of the 1EDI3033AS driver and SiC MOSFETs enables MHz-level switching frequencies, significantly reducing the size and weight of passive components such as inductors and capacitors. This is particularly important for 800V-400V or 800V-12V voltage conversion in electric vehicles, helping to reduce overall vehicle weight and improve energy efficiency.

Applications of the 1EDI3033AS in industrial and renewable energy sectors

In addition to new energy vehicles, the Infineon 1EDI3033AS gate driver has widespread applications in industrial automation and renewable energy sectors. With the advancement of Industry 4.0 and energy transition, the demand for efficient and reliable power electronic solutions is growing rapidly, and the combination of the 1EDI3033AS and SiC MOSFETs is becoming a technical benchmark in these fields.

In the industrial motor drive sector, SiC MOSFETs driven by the 1EDI3033AS can achieve inverter efficiency of up to 98%, supporting switching frequencies of 50–100 kHz, significantly reducing the size of output filters. This is particularly important for high-dynamic performance applications such as servo drives, variable frequency drives, and robotics, as it enhances system response speed and control accuracy. The 1EDI3033AS's high noise immunity also makes it highly suitable for addressing common electromagnetic interference (EMI) challenges in industrial environments.

Photovoltaic inverters are another key application. String inverters driven by the 1EDI3033AS achieve efficiency of up to 99%, representing a 1.5-2% improvement over traditional silicon-based solutions, while reducing volume by 30%. The 1EDI3033AS's high-temperature operating characteristics enable it to withstand the harsh temperature fluctuations of outdoor photovoltaic systems, while its high isolation voltage ensures system safety on the high-voltage DC side.

In the data centre power supply sector, the combination of the 1EDI3033AS and SiC MOSFETs enables server power supplies with efficiency exceeding 96% and power density reaching or exceeding 100W/in³, significantly reducing data centre energy consumption and cooling requirements. The 1EDI3033AS's fast switching characteristics facilitate the implementation of high-frequency LLC resonant converters, reducing the size of transformers and filter components to meet data centres' demand for high-power-density power supplies.