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This space-saving device has a maximum RthJC as low as 0.36 °C/W and features wings that are easy to solder, thereby improving thermal performance and solderability in industrial applications.

Recently, Vishay Intertechnology, Inc. announced the launch of a new 80 V TrenchFET® Gen IV N-channel power MOSFET—the SiEH4800EW—featuring a leadless bonded (BWL) package and industry-leading on-resistance, designed to enhance efficiency in industrial applications. Compared to similarly sized competitive devices, the Vishay Siliconix SiEH4800EW offers a 15% lower on-resistance and an 18% lower RthJC.

The newly released device has a typical on-current of 0.88 mW at 10 V, minimising conduction-related power losses to improve efficiency, while achieving a maximum RthJC of just 0.36 °C/W to enhance thermal performance. This space-saving device measures 8 mm x 8 mm, reducing PCB area by 50% compared to MOSFETs in TO-263 packaging, and its thickness is just 1 mm.

The SiEH4800EW features a fused pad design, increasing the solderable area of the source pad to 3.35 mm², four times larger than traditional PIN solder areas. This reduces current density between the MOSFET and PCB, lowering the risk of electromigration and enhancing design reliability. Additionally, the device's solder-friendly side wings improve solderability and facilitate visual inspection of joint reliability.

This MOSFET is well-suited for synchronous rectification and ORing applications. Typical applications include motor drive controllers, power tools, welding equipment, plasma cutters, battery management systems, robots, and 3D printers. In these applications, the device can operate at high temperatures up to +175°C, while its BWL design minimises parasitic inductance while maximising current capability.

The MOSFET complies with RoHS standards, is halogen-free, and has undergone 100% Rg and UIS testing.