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New and Original RF Transistor [GTVA262701FA-V2-R2] RF Junction Gate Field Effect Transistor

New and Original RF Transistor [GTVA262701FA-V2-R2] RF Junction Gate Field Effect Transistor

Source:our siteTime:2024-04-15Views:

Shenzhen Mingjiada Electronics Co., Ltd. sells brand new and original RF Transistor [GTVA262701FA-V2-R2] RF Junction Gate Field Effect Transistor (RF JFET) Transistor 270W GaN HEMT 48V 2496 to 2690MHzDescriptionThe GTVA262701FA-V2-R2 is a 270 Watt Sil…

Shenzhen Mingjiada Electronics Co., Ltd. sells brand new and original RF Transistor [GTVA262701FA-V2-R2] RF Junction Gate Field Effect Transistor (RF JFET) Transistor 270W GaN HEMT 48V 2496 to 2690MHz


Description

The GTVA262701FA-V2-R2 is a 270 Watt Silicon Carbide Gallium Nitride High Electron Mobility Transistor (HEMT) for multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a lug flange-free thermally enhanced surface mount package.


Features

- SiC HEMT Gallium Nitride Technology

- Input matching

- Typical pulsed CW performance: 10 µs pulse width, 10% duty cycle, 2690 MHz, 48 V

- Output power at P3dB = 270 W

- Efficiency = 66

- Gain = 18.1 dB

- Human Body Model Level 1B (ANSI/ESDA/JEDEC JS-001 compliant)

- Capable of handling 10:1 VSWR @ 48 V, 60 W (WCDMA) output power

- Lead-free, RoHS compliant


Category: Transistors

Series: GaN  

Package: Tape and Reel (TR)  

Part Status: On Sale  

Technology: HEMT  

Frequency: 2.62GHz ~ 2.69GHz  

Gain: 17dB  

Voltage - Test: 48 V  

Rated Current (Amps): -  

Noise Figure: -  

Current - Test: 320 mA  

Power - Output: 270W  

Voltage - Rated: 125 V  

Mounting Type: Surface Mount  

Package/Housing: H-87265J-2  

Supplier Device Package: H-87265J-2  

Base Product Number: GTVA262701 

GTVA262701FA-V2-R2.jpg

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