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Infineon introduces Easy PACK CoolGaN 650 V transistor modules for high voltage applications

Infineon introduces Easy PACK CoolGaN 650 V transistor modules for high voltage applications

Source:our siteTime:2025-05-17Views:

With the rapid development of AI data centers, the increasing popularity of electric vehicles, and the continuous global trends of digitalization and reindustrialization, it is expected that the global demand for electricity will grow rapidly. To addr…

With the rapid development of AI data centers, the increasing popularity of electric vehicles, and the continuous global trends of digitalization and reindustrialization, it is expected that the global demand for electricity will grow rapidly. To address this challenge, Infineon Technologies launched the EasyPACK CoolGaN 650 V transistor module, further expanding its continuously growing portfolio of gallium nitride (GaN) power products. This Module is based on the Easy Power Module platform and is specifically developed for high-power applications such as data centers, renewable energy systems, and DC electric vehicle charging piles. It can meet the growing demand for high performance, offer greater ease of use, help customers accelerate the design process and shorten the time to market for products.

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Roland Ott, senior vice president of Infineon Technologies and head of the Environmental Energy Modules and Systems business, said: This CoolGaN EasyPACK power module combines Infineon's expertise in both power semiconductors and power modules, helping customers address the growing demand for high-performance and energy-saving technologies in applications such as data centers, renewable energy, and electric vehicle charging.


The CoolGaN 650 V power semiconductor integrated in the EasyPACK CoolGaN module has a low parasitic inductance due to the adoption of a compact die package, enabling fast and efficient switching performance. With this design, a single module can provide a maximum single-phase power of 70 kW, capable of supporting compact high-power systems with scalability. Furthermore, this module achieves by integrating Infineon's. The XT interconnection technology, combined with various CoolGaN options, enhances performance and reliability. With the implementation of.XT technology on high-performance substrates, thermal resistance has been significantly reduced, not only enhancing system efficiency but also lowering cooling requirements, enabling the module to achieve higher power density and excellent cycle robustness even under harsh working conditions. The EasyPACK CoolGaN module supports multiple topological structures and customization options, which can meet various requirements of industrial and energy applications.


About EasyPACK


Infineon has sold over 70 million EasyPACK modules, which adopt different chipsets and are widely used in various industrial and automotive applications. Now, Infineon is expanding the application scope of GaN by introducing CoolGaN technology in this package, and the use of GaN will increase the demand for ultra-high kilowatt applications. The EasyPACK series adopts Infineon's PressFIT contact technology to ensure a highly reliable and durable electrical connection between the module and the PCB. By using cold welding technology, PressFIT achieves airtight and solder-free connections, ensuring long-term mechanical stability and conductivity even under harsh thermal and mechanical conditions. This advanced design shortens the manufacturing time, eliminates the defects that may be caused by welding, and provides a powerful solution for high-reliability applications. In addition, the EasyPACK module is compacsely designed. Compared with other traditional discrete layouts, the PCB area it occupies can be reduced by up to 30%, making it a highly cost-effective solution.


Regarding the CoolGaN 650V G5 transistor


The performance and quality factors of the latest generation of CoolGaN 650 V transistors have both been improved. Data from Infineon shows that the output capacitive energy (Eoss) of the CoolGaN 650 V G5 transistor product has decreased by 50%, and both the drain-source charge (Qoss) and the gate charge (Qg) have decreased by 60%. With these features, this product has higher efficiency in both hard-switching and soft-switching applications. Therefore, compared with traditional semiconductor technology, its power loss is significantly reduced, by 20% to 60% depending on specific usage conditions. The CoolGaN 650 V G5 transistor product series offers a variety of RDS(on) package combinations. At present, ten RDS(on) grade products have been launched. These products adopt various SMD packages, such as ThinPAK 5x6, DFN 8x8, TOLL and TOLT. All products are manufactured on high-performance 8-inch production lines in Ferach, Austria and Kulim, Malaysia. The application scope of this product includes USB-C adapters and chargers, consumer and industrial switching power supplies (SMPS) such as lighting, television, data centers, telecommunications rectifiers, renewable energy, and motor drivers in household appliances.


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