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China, 12 May 2025 - ST's SiC MOSFET and IGBT galvanically isolated automotive gate driver STGAP4S offers the flexibility to control inverters of different power ratings, with programmable safety protection and rich diagnostics to ensure that the electric drive system is certified to ISO 26262 ASIL D. The STGAP4S driver integrates an analogue-to-digital converter (ADC) and a flyback power controller with rich features for designing scalable electric drive systems. With integrated analogue-to-digital converters (ADCs) and flyback power controllers, the STGAP4S driver is feature-rich and certified to functional safety standards for designing scalable electric drive systems for electric vehicles.

The STGAP4S owes its design flexibility to an output circuit that allows the connection of a high-voltage power stage to the push-pull buffer circuit of an external MOSFET to adjust gate current. This architecture allows engineers to take advantage of the STGAP4S and its rich set of features to control inverters with different power ratings, including high-power designs with multiple power switching tubes connected in parallel. Using only very small MOSFETs, the driver can generate gate drive currents of up to tens of amps and is capable of handling voltages up to 1200V.

Among the driver's key features, advanced diagnostics help safety-critical applications achieve ISO 26262 Level D (ASIL-D) certification for system safety integrity standards. A self-test function verifies that internal circuits such as connection integrity, gate drive voltage and desaturation, and overcurrent detection are functioning properly. The host controller reads data from the diagnostic status register through the chip's SPI port. In addition, two hardware diagnostic pins provide fault status signals.

The STGAP4S features active Miller clamp, under- and over-voltage lockout (UVLO, OVLO), and desaturation, over-current, and over-temperature detection for a robust design that meets stringent reliability requirements. The high design flexibility allows designers to configure a number of parameters, including protection thresholds, dead time, and deburring filtering, through the SPI port.

The STAGP4S also integrates a flyback power controller with comprehensive protection features to supply power to the high voltage side circuit to generate positive and negative gate drive voltages, improving the switching speed and efficiency of the SiC MOSFETs. There is a 6.4kV galvanic isolation capability between the high voltage side and low voltage side circuits.

The EVALSTGAP4S evaluation board is now available with two STGAP4S drivers on board to help designers evaluate the driver's functionality in half-bridge applications. The design allows users to easily connect additional boards together to evaluate more complex topologies, such as three-phase inverters.

The STGAP4S is available now in production in a SO-36W wide-body dual in-line package.