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According to news on May 8, Alpha and Omega Semiconductor Limited (AOS, Nasdaq: AOSL), a well-known power semiconductor and chip solution provider integrating design, R&D, production and global sales, launched its new generation (Gen3) 1200V aSiC MOSFET series products are designed to provide higher energy efficiency solutions for the booming industrial power application market. Compared with the previous generation of AOS products, this series of products can maintain low conduction losses under high load conditions while significantly improving its switching factor of merit (FOM) by up to 30%. The new product ensures excellent reliability while strengthening performance. Gen3 MOSFET not only passes AEC-Q101 automotive certification, but also has a longer service life and high humidity and high voltage reverse bias (HV-H3TRB) tolerance.

With the surge in power demand from electric vehicles (EVs), artificial intelligence data centers and renewable energy systems, energy efficiency losses in the power conversion process will greatly increase the burden on power supply and cooling systems. In the field of electric vehicle applications, AOS's third-generation αSiC MOSFET can help engineers create a system architecture with higher power density and energy efficiency, effectively reduce battery energy consumption and extend cruising range. For next-generation AI data centers using 800V or ± 400 V high-voltage DC architecture, this product series can meet the growing power demand by reducing losses and increasing power density. The third generation of AOS 1200V devices will become a key component supporting these new high system voltage topologies, providing indispensable and efficient solutions for the industry.

AOS's new third-generation 1200V MOSFET is currently available in a TO27-4L package and offers 15 milliohm (AOM015V120X3Q) to 40 milliohm (AOM040V120X3Q) on-resistance (Rds (on)) options. The company also plans to successively launch the same series of products using surface patch packaging, top heat dissipation packaging and module packaging. For the application of traction inverter modules for high-power electric vehicles, AOS has completed the certification of the third-generation 1200V/11 milliohm large-size wafers and is now open for wafer sales.

"Electric vehicles and AI technology are reshaping the industrial landscape, but this puts higher demands on the power system-it must still operate efficiently when energy demand surges," said David Sheridan, vice president of wide bandgap semiconductor products at AOS. "We are very happy that the new generation of αSiC MOSFETs can make a positive contribution to environmental protection while meeting customer performance needs."

Technical Highlights:

Complies with automotive grade AEC-Q101 standard

Wide gate drive voltage compatibility (+ 15V to + 18V)

Up to 30% increase in switching frequency

Extended HV-H3TRB compliance

Enhanced UIS and short circuit protection capabilities