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Diodes recently announced the expansion of its silicon carbide (SiC) product portfolio, introducing five high-performance, low-quality factor (FoM) 650V silicon carbide Schottky diodes. The rated currents of the DSCxxA065LP series are 4A, 6A, 8A, 10A and 12A. It adopts the T-DFN8080-4 package with ultra-high thermal efficiency and is specially designed for the application of high-efficiency power switch products. For instance, DC-to-DC, AC-to-DC, renewable energy, data centers (especially those handling a large amount of artificial intelligence computing), and industrial motor drives, etc.

The quality factor (FoM = QC × VF) of the DSCxxA065LP series is excellent in the industry, thanks to the following two major features:

There is no reverse recovery current and low capacitance charge (QC), so the switching loss can be ignored.

Low forward voltage (VF) can significantly reduce conduction losses and improve overall power efficiency.

The above two characteristics make this series of products highly suitable for high-speed switching circuits.

The reverse leakage current (IR) of the DSCxxA065LP series is also lower than that of other products in the industry, with A maximum of only 20µA. This can significantly reduce heat dissipation and conduction loss, improve system stability and reliability. Compared with silicon-based Schottky devices, these advantages are more obvious. Reducing heat dissipation can also lower cooling costs and operating expenses.

The compact and thin T-DFN8080-4 (typical size: 8mm x 8mm x 1mm) surface mount package has a large heat sink at the bottom, which can reduce thermal resistance. The T-DFN8080-4 occupies less circuit board area but has a larger heat sink, which can perfectly replace the TO252 (DPAK). These two features help to increase the power density of the circuit design, reduce the overall size and lower the cooling budget.

The order units for DSC04A065LP (4A), DSC06A065LP (6A), DSC08A065LP (8A), DSC10A065LP (10A) and DSC12A065LP (12A) are 2,500 pieces.

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