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Today GigaDevice announced the launch of the GD5F1GM9 series of high-speed QSPI NAND Flash, which, with its breakthrough read speed and innovative Bad Block Management (BBM) feature, can effectively solve the industry pain points of slow response speed and susceptibility to bad block interference of traditional SPI NAND Flash. As a new type of solution that cleverly combines the advantages of high-speed read speed of NOR Flash with the advantages of high-capacity and low cost of NAND Flash, the introduction of GD5F1GM9 series will bring new development opportunities for SPI NAND Flash, and become an ideal choice for security, industrial, IoT and other fast start-up application scenarios.

GD5F1GM9 series high-speed QSPI NAND Flash adopts 24nm process node and supports built-in 8bit ECC, two operating voltages of 3V and 1.8V, and various high-speed read modes such as Continuous Read, Cache Read, Auto Load Next Page, etc., which provides users with various combination design solutions. Compared with traditional SPI NAND Flash, the GD5F1GM9 series abandons the original serial calculation method in ECC design and realises parallel calculation of complex ECC algorithms, which greatly shortens the calculation time of built-in ECC. The maximum clock frequency of this series of 3V products is 166MHz, with a continuous read rate of 83MB/s in Continuous Read mode; the maximum clock frequency of 1.8V products is 133MHz, with a continuous read rate of 66MB/s in Continuous Read mode. This means that at the same frequency, the read speed of the GD5F1GM9 series can reach two to three times that of traditional SPI NAND products. This design advantage effectively improves the data access efficiency of the device, significantly shortens the system start-up time, and further reduces system power consumption.

In order to solve the bad block problem of traditional NAND Flash, the GD5F1GM9 series introduces an advanced Bad Block Management (BBM) function. This feature allows users to effectively address the challenges of factory bad blocks and new bad blocks added during use by changing the mapping relationship between physical and logical block addresses. On the one hand, traditional NAND Flash may have randomly distributed bad blocks when it is shipped from the factory, and if these bad blocks appear in the front code area, the NAND Flash will not be able to be used normally. The GD5F1GM9 series, however, can ensure that the first 256 blocks are all factory good blocks through the Bad Block Management (BBM) function, which in turn guarantees the stability of the code area. On the other hand, during the process of using NAND Flash, new bad blocks may appear, and traditional solutions need to reserve a large number of redundant blocks for the replacement of bad blocks in different partitions, resulting in a serious waste of resources, while the BBM function of the GD5F1GM9 series allows the user to remap the logical address and the physical address to make the corrupted bad block address usable again, and only needs to reserve a minimal redundant Blocks, a feature that not only significantly improves resource utilisation, but also effectively simplifies system design.

‘Currently, the read speed of SPI NAND Flash is generally slow, which has become an important bottleneck restricting the performance enhancement of end products,’ said Ruwei Su, Vice President and General Manager of Storage Business Unit, Mega Innovation, ’The GD5F1GM9 series of high-speed QSPI NAND Flash The launch of the GD5F1GM9 series of high-speed QSPI NAND Flash has set a new performance benchmark in the market. The series not only effectively makes up for the shortcomings of traditional SPI NAND Flash in terms of read speed, but also provides a new solution for the management of bad blocks, which can become an ideal alternative for NOR Flash users under the demand for capacity expansion. In the future, Mega Innovation will also continue to polish the underlying technology to provide customers with more efficient and reliable storage solutions.’

Currently, the MegaTek GD5F1GM9 series is available in 1Gb capacity, 3V/1.8V voltage options, and supports WSON8 8x6mm, WSON8 6x5mm, and BGA24 (5x5 ball array) 5x5ball package options.