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Original Nexperia Transistors PMZ290UNE2 20 V, N-Channel Trench MOSFETs

Original Nexperia Transistors PMZ290UNE2 20 V, N-Channel Trench MOSFETs

Source:our siteTime:2024-01-13Views:

Overview: N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.Model No: PMZ290UNE2Year: 21+FET Type: N-Channel Technology: M…

Overview: N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


Model No: PMZ290UNE2

Year: 21+

FET Type: N-Channel  

Technology: MOSFET (Metal Oxide)  

Drain-Source Voltage (Vdss): 20 V  

Current at 25°C - Continuous Drain (Id) : 1.2A (Ta)  

Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V  

On-resistance (max) at different Id, Vgs: 320 mOhm @ 1.2A, 4.5V  

Vgs(th) at different Id (max): 950mV @ 250µA  

Gate Charge (Qg) (Max) at Vgs: 1.4 nC @ 4.5 V  

Vgs (max): ±8V  

Input capacitance (Ciss) at varying Vds (max): 46 pF @ 10 V  

Power Dissipation (Max): 350mW (Ta), 5.43W (Tc)  

Operating Temperature: -55°C ~ 150°C (TJ)  

Mounting Type: Surface Mount  

Supplier Device Package: SOT-883  

Package/Housing: SC-101, SOT-883 


Features and benefits

• Trench MOSFET technology

• Low threshold voltage

• Very fast switching

• ElectroStatic Discharge (ESD) protection: 2 kV HBM

• Leadless ultra small SMD plastic package: 1.0 x 0.6 x 0.48 mm


Applications

• Relay driver

• High-speed line driver

• Low-side loadswitch

• Switching circuits


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Email:sales@hkmjd.com

Home: www.hkmjd.com

PMZ290UNE2.jpg

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