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Overview: N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.Model No: PMZ290UNE2Year: 21+FET Type: N-Channel Technology: M…
Overview: N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Model No: PMZ290UNE2
Year: 21+
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss): 20 V
Current at 25°C - Continuous Drain (Id) : 1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
On-resistance (max) at different Id, Vgs: 320 mOhm @ 1.2A, 4.5V
Vgs(th) at different Id (max): 950mV @ 250µA
Gate Charge (Qg) (Max) at Vgs: 1.4 nC @ 4.5 V
Vgs (max): ±8V
Input capacitance (Ciss) at varying Vds (max): 46 pF @ 10 V
Power Dissipation (Max): 350mW (Ta), 5.43W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-883
Package/Housing: SC-101, SOT-883
Features and benefits
• Trench MOSFET technology
• Low threshold voltage
• Very fast switching
• ElectroStatic Discharge (ESD) protection: 2 kV HBM
• Leadless ultra small SMD plastic package: 1.0 x 0.6 x 0.48 mm
Applications
• Relay driver
• High-speed line driver
• Low-side loadswitch
• Switching circuits
Contact us:
Tel: +86 13410018555
Email:sales@hkmjd.com
Home: www.hkmjd.com
Time:2024-11-20
Time:2024-11-20
Time:2024-11-20
Time:2024-11-20
Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
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