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Product Details:

The ADPA7009-2ACEZ is a Gallium arsenide (GaAs) pseudocrystal high electron mobility transistor (pHEMT) microwave monolithic integrated circuit (2) MMIC dBm saturation output power 0.5W power amplifier with integrated temperature compensation on-chip power detector. Operating frequency range is 20 GHz to 54 GHz. The amplifier provides a gain of 17.5 dB, an output power of 28 dBm at compression of 1dB (OP1dB), and a typical value of 34.5 dBm at output third-order intermodulation (OIP3) at 20 GHz to 35 GHz.

The ADPA7009-2 requires 850mA of current from a 5V supply. RF inputs and outputs are internally matched and DC blocked for easy integration into higher-level components. Most of the typical external passive components required for operation (AC coupling capacitors and power decoupling capacitors) are integrated, which helps achieve small and compact printed circuit board (PCB) sizes. The ADPA7009-2 is available in a 5.00 mm×5.00 mm 24-terminal chip array small size pin-less cavity (LGA_CAV) package.

Product features:

Integrated power capacitor and bias inductor

Integrated AC coupling capacitor

Gain: 17.5 dB in the 20 GHz to 35 GHz range (typical)

Input return loss: 14 dB in the 20 GHz to 35 GHz range (typical)

Output return loss: 15 dB in the 20 GHz to 35 GHz range (typical)

OP1dB: 28 dBm at 20 GHz to 35 GHz (typical value)

PSAT: 28.5 dBm at 20 GHz to 35 GHz (typical value)

OIP3:34.5dBm at 20GHz to 35GHz (typical value)

Noise index: 7.5 dB in the 20 GHz to 35 GHz range (typical)

5 V supply voltage at 850 mA

Matches 50 Ω input and output

5.00mm × 5.00mm, 24-end heat-resistant enhanced chip array, small form factor, leadless cavity [LGA_CAV] package

Product Application:

• Military and aerospace

• Test instrumentation

Shenzhen Mingjiada Electronics Co., LTD. (for sale) (recycled) ADPA7009-2ACEZ (ADI) 20GHz to 54GHz GaAs pHEMT MMIC power amplifier, if required, please contact Mr. Chen:

Tel: +8613410018555

Email: sales@hkmjd.com

Company website: www.hkmjd.com