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Recall, supply [Renesas] R2A25110KSP IGBT-driven intelligent power devices with microisolators.

Product Description:

The R2A25110KSP intelligent power device is designed for IGBT gate drives in high voltage inverter applications. Miniature isolators with coreless transformer configurations are used for high-voltage isolated data transmission between the primary circuit (MCU side) and the secondary circuit (IGBT side).

The R2A25110KSP intelligent power device integrates IGBT gate drive circuit, Miller clamp circuit, soft shutdown circuit and IGBT temperature detection and other protection circuits. In addition, the R2A25110KSP supports driving parallel IGBTs.

Features

Microisolator on chip

High voltage isolation: 2500VRMS

High common mode rejection (CMR) : >35kV/us

High output grid drive circuit

Maximum gate drive output resistance of 1.0Ω (IGBT parallel connection supported)

On-chip active Miller clamping function

On-chip soft shutdown function

Operating temperature range: -40°C to +125°C (maximum junction temperature +150°C)

On-chip 5V regulator

Various on-chip protection circuits

2 channel IGBT emitter current detection circuit

Overcurrent detection (threshold voltage: 0.25V typical), short circuit detection (threshold voltage: 0.5V typical)

Overcurrent detection can be enabled/disabled (SEL pin)

Two IGBT temperature detection circuit

On-chip undervoltage locking circuit

4.1V Typical VCC1 (5V system)

10V typical VCC2 (15V system)

On-chip overtemperature protection circuit (+200°C)

Fault feedback, the fault holding time can be adjusted by external capacitors

Typical application

• Primary inverter for EV/HEV in automotive applications

• EV/HEV converters in automotive applications

Inverters and converters for industrial instruments

R2A25110KSP block diagram:

Company website: www.hkmjd.com