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Infineon Transistors AIKB50N65DF5ATMA1_AIKB50N65DH5ATMA1 Discrete IGBTs

Infineon Transistors AIKB50N65DF5ATMA1_AIKB50N65DH5ATMA1 Discrete IGBTs

Source:our siteTime:2023-08-28Views:

Shenzhen Mingjiada Electronics Co., Ltd. supply and demand Infineon transistor AIKB50N65DF5ATMA1_AIKB50N65DH5ATMA1 TRENCHSTOP™ 5 F5 discrete IGBT, as long as the original and genuine, such as agents, traders, terminal factories and so on.Model:AIKB5…

Shenzhen Mingjiada Electronics Co., Ltd. supply and demand Infineon transistor AIKB50N65DF5ATMA1_AIKB50N65DH5ATMA1 TRENCHSTOP™ 5 F5 discrete IGBT, as long as the original and genuine, such as agents, traders, terminal factories and so on.


Model:AIKB50N65DF5ATMA1_AIKB50N65DH5ATMA1

Year: Latest

Description: IGBT NPT 650 V 50 A Surface Mount PG-TO263-3-2


Description

Infineon TRENCHSTOP™ 5 F5 discrete IGBTs are optimised for switching >60kHz to provide the best efficiency and bridge the gap between MOSFETs and IGBTs. The F5 series significantly reduces switching losses compared to current leading solutions. The target topologies are boost stage, PFC (AC-DC) stage and high voltage DC-DC topologies commonly found in applications such as uninterruptible power supplies (UPS), inverter welders, and switching power supplies (SMPS). 650V TRENCHSTOP™ 5 F5 IGBTs, together with silicon carbide diodes, are designed for low inductance and offer efficiency 1% higher than that of the 650V TRENCHSTOP™ 5 H5 series. The F5 product requires more design effort, but the payoff is higher.


Properties

Product Category: IGBT Transistors

Package / Case: TO-263-3

Mounting Style: SMD/SMT

Configuration: Single

Maximum collector-emitter voltage VCEO: 650 V

Collector-emitter saturation voltage: 1.6 V

Gate/Emitter Maximum Voltage: - 20 V, 20 V

Continuous collector current at 25 C: 80 A

Pd-power dissipation: 305 W

Minimum operating temperature: - 40 C

Maximum operating temperature: + 175 C


Applications

Solar inverters

UPS

Welding converters

Medium and high frequency switching inverters


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