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(TO-247) IGBT Transistor IGW30N60H3 600V High Speed Switching Series 3rd Generation
Shenzhen Mingjiada Electronics Supply IGBT Transistor IGW30N60H3 600V High Speed Switching Series Third Generation 600V HI SPEED SW IGBTIGW30N60H3 Product DescriptionThe high-speed 600 V, 30 A single-channel TRENCHSTOP™ IGBT3 in TO247 package offers …
Shenzhen Mingjiada Electronics Supply IGBT Transistor IGW30N60H3 600V High Speed Switching Series Third Generation 600V HI SPEED SW IGBT
IGW30N60H3 Product Description
The high-speed 600 V, 30 A single-channel TRENCHSTOP™ IGBT3 in TO247 package offers the best compromise between switching and conduction losses. The key feature of this series is the MOSFET-like turn-off switching behaviour, which results in low turn-off losses.
IGW30N60H3 Product Attributes
Manufacturer: Infineon
Product Category: Insulated Gate Bipolar Transistors (IGBTs)
Technology: Si
Package / Case: TO-247-3
Mounting Style: Through Hole
Configuration: Single
Maximum collector-emitter voltage VCEO: 600 V
Collector-emitter saturation voltage: 1.95 V
Gate/Emitter Maximum Voltage: - 20 V, 20 V
Continuous collector current at 25 C: 60 A
Pd-power dissipation: 187 W
Minimum operating temperature: - 40 C
Maximum operating temperature: + 175 C
Series: HighSpeed 3
Gate-emitter leakage current: 100 nA
IGW30N60H3 Product Applications:
Uninterruptible power supplies
Welding converters
Converters with High Frequency Switching
Time:2025-02-22
Time:2025-02-22
Time:2025-02-22
Time:2025-02-22
Contact Number:86-755-83294757
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