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(TO-247) IGBT Transistor IGW30N60H3 600V High Speed Switching Series 3rd Generation

(TO-247) IGBT Transistor IGW30N60H3 600V High Speed Switching Series 3rd Generation

Source:our siteTime:2025-02-14Views:

Shenzhen Mingjiada Electronics Supply IGBT Transistor IGW30N60H3 600V High Speed Switching Series Third Generation 600V HI SPEED SW IGBTIGW30N60H3 Product DescriptionThe high-speed 600 V, 30 A single-channel TRENCHSTOP™ IGBT3 in TO247 package offers …

Shenzhen Mingjiada Electronics Supply IGBT Transistor IGW30N60H3 600V High Speed Switching Series Third Generation 600V HI SPEED SW IGBT


IGW30N60H3 Product Description

The high-speed 600 V, 30 A single-channel TRENCHSTOP™ IGBT3 in TO247 package offers the best compromise between switching and conduction losses. The key feature of this series is the MOSFET-like turn-off switching behaviour, which results in low turn-off losses.

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IGW30N60H3 Product Attributes

Manufacturer: Infineon

Product Category: Insulated Gate Bipolar Transistors (IGBTs)

Technology: Si

Package / Case: TO-247-3

Mounting Style: Through Hole

Configuration: Single

Maximum collector-emitter voltage VCEO: 600 V

Collector-emitter saturation voltage: 1.95 V

Gate/Emitter Maximum Voltage: - 20 V, 20 V

Continuous collector current at 25 C: 60 A

Pd-power dissipation: 187 W

Minimum operating temperature: - 40 C

Maximum operating temperature: + 175 C

Series: HighSpeed 3

Gate-emitter leakage current: 100 nA


IGW30N60H3 Product Applications:

Uninterruptible power supplies

Welding converters

Converters with High Frequency Switching

IGW30N60H3.jpg

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