Supply Infineon Power Transistors IPB120N10S4-05 N-Channel Automotive MOSFETs

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Supply Infineon Power Transistors IPB120N10S4-05 N-Channel Automotive MOSFETs

Source:our siteTime:2023-07-31Views:

Shenzhen Mingjiada Electronics Co., Ltd. is pleased to announce the new original supply of Infineon power transistor IPB120N10S4-05 N-channel automotive MOSFET in accordance with AEC-Q101 standard for automotive applications.Supply Model:IPB120N10S4-0…

Supply Model:IPB120N10S4-05

Year: New 23+

Package: TO-263

Product Attributes

Manufacturer: Infineon

Product Category: MOSFETs

Technology: Si

Mounting Style: SMD/SMT

Package / Case: TO-263-3

Transistor Polarity: N-Channel

Number of Channels: 1 Channel

Vds-Drain-source breakdown voltage: 100 V

Id-Continuous drain current: 120 A

Rds On-drain on-resistance: 5 mOhms

Vgs - gate-source voltage: - 20 V, + 20 V

Vgs th - gate-source threshold voltage: 2.7 V

Qg - gate charge: 91 nC

Minimum operating temperature: - 55 C

Maximum operating temperature: + 175 C

Pd-Power dissipation: 190 W

Channel mode: Enhancement

Qualification: AEC-Q101

Configuration: Single

Down time: 35 ns

Height: 4.4 mm

Length: 10 mm

Rise Time: 10 ns

Transistor Type: 1 N-Channel

Typical turn-off delay time: 30 ns

Typical turn-on delay time: 15 ns

Width: 9.25 mm

Unit weight: 4 g

This MOSFET is ideally suited for use in fuel injection systems, in-vehicle wireless charging applications, and the C02 reduced 48V power subsystem known as the Board Net.

For more information, please contact Mr Chen by phone:

Tel: +86 13410018555

Email: sales@hkmjd.com

Company Home：www.hkmjd.com

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