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Supply and Recycled N-Channel IPD35N10S3L26ATMA1 Automotive Grade MOSFETs Transistors
Supply and Recycled N-Channel IPD35N10S3L26ATMA1 100V Automotive Grade MOSFETs Transistors TO-252-3SpecificationsTransistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 100 V Id - Continuous Drain Current: 35…
Supply and Recycled N-Channel IPD35N10S3L26ATMA1 100V Automotive Grade MOSFETs Transistors TO-252-3
Specifications
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 35 A
Rds On - Drain-Source Resistance: 20 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 1.2 V
Qg - Gate Charge: 39 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 71 W
Channel Mode: Enhancement
Product Description
IPD35N10S3L26ATMA1 is OptiMOS®-T Power-Transistor, Optimized total gate charge for smaller driver output stage.
Features
N-Channel - Enhanced Mode
100% avalanche tested
175°C operating temperature
Maximum current up to 180A
MSL1 peak return temperature up to 260°C
Low switching power and conduction power losses for high thermal efficiency
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Time:2024-11-19
Time:2024-11-18
Time:2024-11-18
Time:2024-11-18
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