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Introducing the IKW75N65ES5 650V Insulated Gate Bipolar Transistor (IGBT) in TO247
IntroductionThe IKW75N65ES5 device is a 650 V hard switch TRENCHSTOP™ 5 S5 IGBT in the TO247 package, suitable for applications with switching frequencies between 10 kHz and 40 kHz, enabling high efficiency and faster time-to-market. Reduce circuit d…
Introduction
The IKW75N65ES5 device is a 650 V hard switch TRENCHSTOP™ 5 S5 IGBT in the TO247 package, suitable for applications with switching frequencies between 10 kHz and 40 kHz, enabling high efficiency and faster time-to-market. Reduce circuit design complexity and optimize PCB bill of material costs.
Feature description
At 25°C, VCEsat is as low as 1.35V, 20% lower than TRENCHSTOP™ 5 H5
4 times the Ic pulse current (100°C Tc)
Soft current drop feature, no tail current
Symmetrical, voltage overshoot
The grid voltage is controlled (no vibration). There is no unnecessary risk of device conduction and no need for grid clamping.
The highest junction temperature Tvj = 175°C
Quality meets JEDEC standard
Advantages
The VCEpeak clamping circuit is not required
No grid-clamping element is required
Excellent EMI behavior
Ideal for parallel operation
Specifications
Model: IKW75N65ES5
IGBT Type: channel
Voltage-emitter breakdown (Max) : 650 V
Current - Collector (Ic) (Max) : 80 A
Current-collector pulse (Icm) : 300 A
Different Vge, Ic Vce(on) (maximum) : 1.75V @ 15V, 75A
Power - Max. : 395 W
Switching energy: 2.4mJ (on), 950µJ (off)
Input type: Standard
Grid charge: 164 nC
Td (On/off) value at 25°C: 40ns/144ns
Test conditions: 400V, 75A, 18 ohms, 15V
Reverse recovery time (trr) : 85 ns
Operating temperature: -40°C ~ 175°C (TJ)
Installation type: Through hole
Package/housing: TO-247-3
Supplier device package: PG-TO247-3
Application field
48V distribution
Energy Storage Systems - Infineon website
Single phase series inverter solution
Fast charging of electric vehicles
Time:2025-01-10
Time:2025-01-10
Time:2025-01-10
Time:2025-01-10
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