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Memory S29GL032N90TFI030 NOR Flash 3V 32Mb Parallel 90 ns 48-TSOP

Memory S29GL032N90TFI030 NOR Flash 3V 32Mb Parallel 90 ns 48-TSOP

Source:our siteTime:2024-12-31Views:

Shenzhen Mingjiada Electronics Co., Ltd. supply Infineon Memory S29GL032N90TFI030 NOR Flash 3V 32Mb Parallel 90 ns 48-TSOP, brand new and original, quality assurance, welcome to inquire!Product Description:The S29GL032N90TFI030 devices are 3.0-volt si…

Shenzhen Mingjiada Electronics Co., Ltd. supply Infineon Memory S29GL032N90TFI030 NOR Flash 3V 32Mb Parallel 90 ns 48-TSOP, brand new and original, quality assurance, welcome to inquire!


Product Description:

The S29GL032N90TFI030 devices are 3.0-volt single-supply flash memory manufactured using 110 nm MirrorBit technology.The S29GL032N90TFI030 is a 32-Mb device organised by 2,097,152 words or 4,194,304 bytes. Depending on the model, these devices have a 16-bit wide data bus only, or a 16-bit wide data bus that can also be used as an 8-bit wide data bus by using the BYTE# input. The devices can be programmed from a host system or from a standard EPROM programmer.


Product Benefits:

Single-supply operation

Manufactured on 110nm MirrorBit process technology

Secure silicon sectors

128-byte/256-byte sectors, permanently and securely identified by 8-byte/16-byte random electronic serial numbers, accessible by command sequence

Programmed and locked at the factory or by the customer

Flexible sector structure

32 Mb (Unified Sector Model): 64 32K word (64 KB) sectors

32 Mb (boot sector model): 63 32K word (64 KB) sectors + 8 4K word (8 KB) boot sectors

Enhanced VersatileI/O™ Control

All input levels (address, control, and DQ input levels) and outputs are determined by the VIO input voltage, which ranges from 1.65 to VCC.

Compatible with JEDEC standards

Provides pin-out and software compatibility for single-supply flash memory with excellent unintentional write protection

Typical 100,000 erasures per sector

20 years typical data retention


S29GL032N90TFI030 Device Parameters:

Memory Type: Non-Volatile  

Memory Format: Flash  

Technology: FLASH - NOR  

Memory Capacity: 32Mb  

Memory Organisation: 4M x 8, 2M x 16  

Memory Interface: Parallel  

Write cycle time - word, page: 90ns  

Access Time: 90 ns  

Voltage - Supply: 2.7V ~ 3.6V  

Operating Temperature: -40°C ~ 85°C (TA)  

Mounting Type: Surface Mount  

Package/Housing: 48-TFSOP (0.724’, 18.40mm Width)  

Supplier Device Package: 48-TSOP 

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Email: sales@hkmjd.com

Website: www.hkmjd.com

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