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IGBT Module_FZ1000R65KE4P2_With Trench/Field Cutoff IGBT4 High Insulation Module

IGBT Module_FZ1000R65KE4P2_With Trench/Field Cutoff IGBT4 High Insulation Module

Source:our siteTime:2024-12-13Views:

Shenzhen Mingjiada Electronics Co., Ltd. new original Infineon IGBT module_FZ1000R65KE4P2_High Insulation Module with Trench/Field Cutoff IGBT4 and Emitter Controlled 4 DiodeDevice DescriptionFZ1000R65KE4P2 6500 V, 1000 A, 190 mm single-switch IGBT mo…

Shenzhen Mingjiada Electronics Co., Ltd. new original Infineon IGBT module_FZ1000R65KE4P2_High Insulation Module with Trench/Field Cutoff IGBT4 and Emitter Controlled 4 Diode


Device Description

FZ1000R65KE4P2 6500 V, 1000 A, 190 mm single-switch IGBT module with IGBT4 trench field-stop technology - the optimal solution for HVDC-VSC, traction and industrial applications.

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Electrical Characteristics

- Vces = 6500 V

- IC rating = 1000 A / ICRM = 2000 A

- Low VCE saturation

Mechanical Characteristics

- Extended storage temperature down to Tstg = -55 °C

- Package with 10.4 kV AC 60 s reinforced insulation

- High creepage and clearance distances

- Package with CTI > 600

- AlSiC backplane for enhanced thermal cycling capability


Potential applications

Medium voltage converters

Traction

Transmission and Distribution


Product Attributes

Product Category: IGBT Modules

Product: Highly Insulated Modules

Configuration: Single

Maximum collector-emitter voltage VCEO: 6.5 kV

Collector-emitter saturation voltage: 3.25 V

Continuous collector current at 25 C: 1 kA

Gate-emitter drain current: 400 nA

Pd-power dissipation: 3.6 MW

Package / Case: 190 mm x 140 mm x 48 mm

Minimum operating temperature: - 50 C

Maximum operating temperature: + 135 C

Maximum gate/emitter voltage: 20 V

Humidity Sensitivity: Yes

Mounting Style: Screw Mount


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