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Shenzhen Mingjiada Electronics Co., Ltd. supplies IGBT transistors SCTW100N65G2AG automotive grade silicon carbide power MOSFETs, 650 V, 100 A, 20 mOhm (typical, TJ = 25°C), HiP247 package

SCTW100N65G2AG Product Overview

Description

This silicon carbide power MOSFET transistor has been developed using ST's advanced and innovative second generation silicon carbide (SiC) MOSFET technology. Both RDS(on) and switching loss variation are very little affected by operating junction temperature.

All features

Designed for automotive applications

On-state resistance sensitive to temperature change Temperature

Stable, ultra-fast propriety diode

Adaptable to very high operating temperatures (TJ = 200 °C)

Low capacitance

Product properties

Product type: MOSFET

Technology: SiC

Mounting Style: Through Hole

Package / Case: HiP-247-3

Transistor Polarity: N-Channel

Number of Channels: 1 Channel

Vds - drain-source breakdown voltage: 650 V

Id-Continuous drain current: 100 A

Rds On - drain-source on-resistance: 69 mOhms

Vgs - Gate-source voltage: - 10 V, + 22 V

Vgs th-Gate source threshold voltage: 5 V

Qg - gate charge: 162 nC

Minimum operating temperature: - 55 C

Maximum operating temperature: + 200 C

Pd - power dissipation: 420 W

Channel mode: Enhancement

Qualification: AEC-Q101

Series: SCTW100N65G2AG

Product Type: MOSFET

Factory Pack Quantity: 600

Sub Category: MOSFETs

Unit Weight: 4.500 g

The company recovers IGBT transistors SCTW100N65G2AG automotive grade silicon carbide power MOSFETs at high prices, only regular channel sources, such as agents, traders, end factories, etc., not accepting sources that are not regular channels.

If you have a need, welcome to call Mr. Chen to consult:

Tel: +86 13410018555

E-mail: sales@hkmjd.com

Company website: www.hkmjd.com