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Shenzhen Mingjiada Electronics Co., Ltd supplies and acquires ROHM SiC MOSFET SCT4062KW7HRTL Surface Mount Type N-Channel 1200 V 24A (Tc) 93W TO-263-7L

ROHM's Generation 4 SiC MOSFETs

The SCT4 series is the 4th generation with improved short-circuit withstand time and the industry's ultra-low on-resistance. Compared to previous products, this series has reduced on-resistance by approximately 40% and switching losses by approximately 50%. In addition, the product supports a more manageable 15V gate-source voltage, making it easier to design products for applications.

Product description:

The SCT4062KW7HRTL is a 1200V, 24A Nch SiC power MOSFET that uses a trench structure to achieve a lower on-resistance and is a highly reliable automotive grade product that complies with AEC-Q101 standards.

Product features:

AEC-Q101 compliant

Low on-resistance  

Fast switching speed  

Fast reverse recovery  

Easy to parallel connect Easy to drive  

Lead-free plating; RoHS compliant

Product attributes:

FET Type: N-channel  

Technology: SiCFET (silicon carbide)  

Drain source voltage (Vdss): 1200 V  

Current at 25°C - Continuous Drain (Id): 24 A (Tc)  

Drive voltage (max Rds On, min Rds On): 18V  

On-resistance (max) for different Id, Vgs: 81 milliohms @ 12A, 18V  

Vgs(th) for different Id (max): 4.8V @ 6.45mA  

Gate charge (Qg) at different Vgs (max): 64 nC @ 18 V  

Vgs (max): +21V, -4V  

Input capacitance (Ciss) at different Vds (max): 1498 pF @ 800 V  

FET function: -  

Power dissipation (max): 93W  

Operating temperature: 175°C (TJ)  

Mounting type: Surface mount type  

Supplier Device Package: TO-263-7L  

Package/Case: TO-263-8, D²Pak (7-lead + tab), TO-263CA

If you are interested, please call Mr. Chen at

Tel: +86 13410018555

E-mail: sales@hkmjd.com

Company Home: www.hkmjd.com