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Shenzhen Mingjiada Electronics Co., Ltd. new and original supply of RF front-end ADRF5545ABCPZN ADRF5545 dual-channel 2.4 GHz to 4.2 GHz receiver front-end

ADRF5545ABCPZN Overview:

Product Details

The ADRF5545A is a dual-channel integrated radio frequency (RF) front-end multi-chip module designed for time division duplex (TDD) applications operating from 2.4 GHz to 4.2 GHz. The ADRF5545A is a dual-channel configuration containing a cascaded two-stage low noise amplifier (LNA) and a high-power silicon single knife double throw (SPDT) switch.

In high gain mode, the cascaded two-stage LNA and switch provide a low noise figure (NF) of 1.45 dB and a high gain of 32 dB at 3.6 GHz and an output 3rd order intermodulation point (OIP3) of 32 dBm (typical). In low gain mode, one of the two LNA stages is bypassed, providing 16 dB of gain at a lower current of 36 mA. In off mode, the LNA is switched off and the device current consumption is 12 mA.

During transmit, the switch provides a low insertion loss of 0.65 dB when the RF input is connected to the end electrode pin (TERM-ChA or TERM-ChB) and handles 40 dBm of Long Term Evolution (LTE) average power (9 dB peak/average ratio (PAR)) over its lifetime, compared to 43 dBm in single event (<10 seconds) LNA protection mode. dBm.

The device is available in a compact 6 mm × 6 mm 40-pin RoHS-compliant LFCSP package.

Device Applications

Wireless infrastructure

TDD large-scale multi-input and multi-output and active antenna systems

TDD-based communication systems

Features and benefits

Integrated dual-channel RF front-end

2-stage LNA and high power SPDT switch

On-chip biasing and matching

Single power supply

Gain

High gain mode: 32 dB (typical) at 3.6 GHz

Low gain mode: 16 dB (typ.) at 3.6 GHz

Low noise index

High gain mode: 1.45 dB (typ.) at 3.6 GHz

Low gain mode: 1.45 dB (typ.) at 3.6 GHz

High isolation

RXOUT-CHA and RXOUT-CHB: 47 dB (typ.)

TERM-CHA and TERM-CHB: 52 dB (typ.)

Low insertion loss: 0.65 dB (typ.) at 3.6 GHz

High power handling capability at TCASE = 105°C

Full lifecycle

LTE average power (9 dB PAR): 40 dBm

Single event (<10 sec run)

LTE average power (9 dB PAR): 43 dBm

High OIP3: 32 dBm (typical)

Off mode and low gain mode (for LNA)

Low supply current

High gain mode: 86 mA at 5 V (typical)

Low gain mode: 36 mA (typ.) at 5 V

Off mode: 12 mA (typ.) at 5 V

Positive logic control

6 mm × 6 mm 40-pin LFCSP package

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