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Supply Transistor IPD06P004N P-channel MOSFET 60 V 16.4A 63W PG-TO252-3

Supply Transistor IPD06P004N P-channel MOSFET 60 V 16.4A 63W PG-TO252-3

Source:our siteTime:2023-05-23Views:

Mingjiada Electronics Co., Ltd. supply transistors IPD06P004N P-channel MOSFET 60 V 16.4A 63W PG-TO252-3, imported original, quality assurance, real single can be discussed in detail , interested friends welcome to call contact Mr. Chen, Tel: +8613410…

Mingjiada Electronics Co., Ltd. supply transistors IPD06P004N P-channel MOSFET 60 V 16.4A 63W PG-TO252-3, imported original, quality assurance, real single can be discussed in detail , interested friends welcome to call contact Mr. Chen, Tel: +8613410018555, E-mail: sales@hkmjd.com!

IPD06P004N.jpg

Features

- P-Channel

- True low resistance RDS (on)

- Tested and 100% unaffected

- Normal level

- Enhanced mode

- Lead-free plating; RoHS compliant

- Halogen free according to IEC 61249-2-21


Specification parameters

FET Type: P-Channel  

Technology: MOSFET (metal oxide)  

Drain Source Voltage (Vdss): 60 V  

Current at 25°C - continuous drain (Id): 16.4 A (Tc)  

Drive voltage (max Rds On, min Rds On): 10 V  

On-resistance (max) for different Id, Vgs: 90 milliohms @ 16.4A, 10V  

Vgs(th) for different Id (max): 4V @ 710µA  

Gate charge (Qg) at different Vgs (max): 27 nC @ 10 V  

Vgs (max): ±20V  

Input capacitance (Ciss) at different Vds (max): 1100 pF @ 30 V  

FET function: -  

Power dissipation (max): 63 W (Tc)  

Operating temperature: -55°C ~ 175°C (TJ)  

Mounting Type: Surface Mount Type  

Supplier Device Package: PG-TO252-3  

Package/Case: TO-252-3, DPak (2 leads + Tab), SC-63

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