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March 15 reported that PV inverter manufacturers have been adopting SiC MOSFETs at an increasing rate in recent years. Two more manufacturers have recently adopted SiC MOSFETs in their inverters. on 30 January, the German KATEK Group announced that its Steca solar inverter coolcept fleX series has adopted Nano Semiconductors' GeneSiC family of power semiconductors to increase efficiency while reducing size, weight and cost. the GeneSiC power devices are based on trench Auxiliary planar gate SiC MOSFET technology that can operate at high temperatures and high speeds with up to three times longer life for high power and fast time-to-market applications. on 13 January, US manufacturer Brek Electronics developed two string inverters with SiC MOSFETs for devices up to 200kW and 400kW, with device efficiencies of up to 99% and a reduction in mean time to failure.

SiC (silicon carbide) power devices offer better switching efficiency and efficient heat build-up. High voltage MOSFETs made from SiC offer superior switching performance and function independently of temperature, making them highly effective in warming systems. In addition, SiC MOSFETs can also boast an inverter efficiency of more than 99% with a high conversion frequency. The leading PV inverter companies have already started to adopt SiC MOSFET power devices to replace silicon devices, and it is expected that in the medium to long term, SiC will become the main manufacturing material for power devices in the solar PV sector, driving the industry chain as a whole to achieve iterative upgrading. Researchers expect SiC PV inverters to account for 50% of the market by 2025, accelerating the outbreak of incremental market demand.

Guoxing (002449) has introduced SiC MOSFETs with the advantages of Si IGBTs, which have a faster switching response and lower losses. The company's SiC power module products can be used in PV inverters and can be customised according to customer needs.

New Clean Energy (605111) has launched a series of SiC MOSFETs such as 1200V 60mohm SiC MOSFETs, which have also passed the relevant electrical performance test and reliability assessment, and the comprehensive characteristics of the products have reached the international advanced level.