sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:F3L8MR12W2M1HB11
Data Manual:F3L8MR12W2M1HB11.pdf
Brand:INFINEON
Particular Year:23+
Package:MODULE
Delivery Date:New original
Stock: 1000pcs
F3L8MR12W2M1HB11 EasyPACK™ 2B 1200V / 8mΩ three-level module featuring CoolSiC™ MOSFETs with enhanced first-generation trench technology, integrated NTC temperature sensor, pre-coated thermal interface material and PressFIT compression technology.
Features:
12mm high, best-in-class package
Combine advanced wide bandgap WBG chip with Easy module package
Very low module stray inductance
Low and consistent gate inductance
Very symmetrical internal chip layout
Wide Reverse Bias Safe Workspace (RBSOA)
1200 V CoolSiC™ MOSFETs with enhanced first generation trench technology
Expanded recommended grid drive voltage window (+15... +18 V and 0... -5 V)
Extended maximum gate-source voltage (+23 V and -10 V)
Under overload conditions, the Tvjop reaches 175°C
PressFIT pin
Precoated Thermal Interface Material (TIM)
Applications:
Uninterruptible Power Supply (UPS)
Energy storage system
Fast charging of electric vehicles
Solar energy system solutions
Model
Brand
Package
Quantity
Describe
INFINEON
MODULE
2000
IGBT Module Trench Field Stop Triple Inverter 950 V 310 A 20 mW Base Mount
INFINEON
Module
2000
IGBT Module Trench Field Cutoff 2 Standalone 1700 V 900 A 20 mW Chassis Mount
INFINEON
Module
2000
IGBT Module Trench Field Stop 2 Independent 1200 V 600 A 20 mW Chassis Mount AG-ECONOD
VISHAY
SOT-227
1000
"Low-side chopper" IGBT module SOT-227 (grooved field Cut-off IGBT), 47 A
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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