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SIZF918DT-T1-GE3 is Dual N-Channel 30V MOSFET Transistors With Schottky Diode.

Specifications Of SIZF918DT-T1-GE3

Technology MOSFET (Metal Oxide)

Configuration 2 N-Channel (Dual), Schottky

Drain to Source Voltage (Vdss) 30V

Current - Continuous Drain (Id) @ 25°C 23A (Ta), 40A (Tc), 35A (Ta), 60A (Tc)

Rds On (Max) @ Id, Vgs 4mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V

Vgs(th) (Max) @ Id 2.4V @ 250µA, 2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V, 56nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds 1060pF @ 15V, 2650pF @ 15V

Power - Max 3.4W (Ta), 26.6W (Tc), 3.7W (Ta), 50W (Tc)

Operating Temperature -55°C ~ 150°C (TJ)

Features Of SIZF918DT-T1-GE3

TrenchFET® Gen IV power MOSFET

SkyFET® low side MOSFET with integrated Schottky

100 % Rg and UIS tested

Applications Of SIZF918DT-T1-GE3

CPU core power

Computer / server peripherals

POL

Synchronous buck converter

Telecom DC/DC

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