sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:DF80R07W1H5FPB11
Data Manual:DF80R07W1H5FPB11.pdf
Brand:INFINEON
Particular Year:23+
Package:MODULE
Delivery Date:New original
Stock: 1000pcs
The DF80R07W1H5FPB11 650V EasyPACK™ IGBT module is a high-speed device designed for ultimate efficiency and is suitable for applications with switching rates greater than 30kHz. The H5 (High Speed 5) IGBT uses TRENCHSTOP™ 5 technology with integrated RAPID 1 fast flexible reverse parallel diode. Typical applications include UPS, welding converters, solar cell bank inverters, and medium and high frequency switching converters.
Product Specifications:
IGBT type: trench type field cut-off
Configuration: Two independent
Voltage-emitter breakdown (Max) : 650 V
Current - Collector (Ic) (Max) : 40 A
Power - Maximum: 20 mW
Vce(on) (Max.) for different Vge and Ic: 1.72V@15V, 20A
Current-collector cutoff (Max.) : 12 µA
Input capacitance (Cies) for different Vce: 2 nF @ 25 V
Input: Standard
NTC thermistor: Yes
Operating temperature: -40°C ~ 150°C (TJ)
Installation type: Base installation
Package/shell: Module
Supplier device package: AG-EASY1B-2
Basic product number: DF80R07
Model
Brand
Package
Quantity
Describe
INFINEON
MODULE
2000
IGBT Module Trench Field Stop Triple Inverter 950 V 310 A 20 mW Base Mount
INFINEON
Module
2000
IGBT Module Trench Field Cutoff 2 Standalone 1700 V 900 A 20 mW Chassis Mount
INFINEON
Module
2000
IGBT Module Trench Field Stop 2 Independent 1200 V 600 A 20 mW Chassis Mount AG-ECONOD
VISHAY
SOT-227
1000
"Low-side chopper" IGBT module SOT-227 (grooved field Cut-off IGBT), 47 A
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A: You can inquire through the website, or by phone and email.
A: the delivery date is marked in most commodity information. You can estimate the delivery time of the commodity according to the delivery date. The specific arrival time depends on the warehouse where the commodity is located and the logistics mode you choose.
A: you can issue ordinary invoices for individual users or special VAT invoices for enterprise users.
Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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