sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:RF Power Transistors
Brand:NXP
Particular Year:24+
Package:NI-880X-4L4S-8
Delivery Date:New and original
Stock: 3000pcs
The AFT23H160-25SR3 device is a 2300-2400 MHz, 32 W average, 28 V Airfast® LDMOS RF power transistor designed for mobile communications base station applications.
Features:
Advanced high performance Doherty package
A larger negative grid-source voltage range improves Class C operation
Designed for digital predistortion error correction systems
AFT23H160-25SR3 Specifications:
Technology: LDMOS
Configuration: Dual
Frequency: 2.3GHz
Gain: 16.7dB
Voltage - Test: 28 V
Rated current: -
Noise figure: -
Current - Test: 450 mA
Power - Output: 32W
Voltage - Rated: 65 V
Installation type: Base installation
Package/housing: NI-880X-4L4S-8
Supplier device package: NI-880X-4L4S-8
Basic product number: AFT23
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NXP Semiconductors was founded in 2006. Its predecessor was the semiconductor business unit of Philips, the Netherlands, which was established in 1953 and headquartered in Eindhoven, the Netherlands. NXP was listed on Nasdaq in 2010.In 2015, NXP acqui…
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