sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:RF Power Transistors
Brand:NXP
Particular Year:24+
Package:DFN-6
Delivery Date:New and Original
Stock: 5000pcs
This 7.6 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3700 to 3980 MHz.
This part is characterized and performance is guaranteed for applications operating in the 3700 to 3980 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.
Features
High terminal impedances for optimal broadband performance
Improved linearized error vector magnitude with next generation signal
Able to withstand extremely high output VSWR and broadband operating conditions
Designed for low complexity linearization systems
Optimized for massive MIMO active antenna systems for 5G base stations
RoHS compliant
A5G38H055NT4 Device Specifications
Technology: GaN
Frequency: 3.7GHz ~ 3.98GHz
Gain: 15dB
Voltage - Test: 48 V
Current - Test: 45 mA
Power - Output: 7.6W
Voltage - Rated: 125 V
Mounting Type: Surface Mount
Package/Shell: 6-LDFN Exposed Pad
Supplier Device Package: 6-PDFN (7x6.5)
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