sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:TW070J120B,S1Q
Data Manual:TW070J120B,S1Q.pdf
Brand:TOSHIBA
Particular Year:23+
Package:TO-3P
Delivery Date:New original
Stock: 3000pcs
TW070J120B,S1Q Third generation silicon carbide MOSFETs designed for switched voltage regulator applications
Product Specifications:
FET type: N channel
Technology: SiCFET (Silicon carbide)
Drain-source voltage (Vdss) : 1200 V
Current at 25°C - Continuous Drain (Id) : 36A (Tc)
Drive voltage (Max Rds On, min Rds On) : 20V
On-resistance (Max.) at different ids and Vgs: 90 milliohm @ 18A, 20V
Vgs(th) (Max.) : 5.8V@20mA for different ids
Gate charge (Qg) at different Vgs (Max.) : 67 NC-@20 V
Vgs (Max.) : ±25V, -10V
Input capacitance (Ciss) at different Vds (Max.) : 1680 PF-@800 V
FET function: Standard
Power dissipation (Max.) : 272W (Tc)
Operating temperature: -55°C ~ 175°C
Installation type: Through hole
Supplier Device Package: TO-3P (N)
Package/housing: TO-3P-3, SC-65-3
Basic product number: TW070J120
Model
Brand
Package
Quantity
Describe
ON
TO-247-3
3000
Silicon Carbide (SiC) MOSFET-EliteSiC, 32 mohm, 650 V, M3S, TO-247-3L
ON
TO-247-4
3000
Silicon Carbide (SiC) MOSFET-EliteSiC, 32 mohm, 650 V, M3S, TO-247-4L
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TOSHIBA (Toshiba), Japans largest semiconductor manufacturer, the second largest integrated motor manufacturer, is affiliated to the Mitsui Group.Toshiba, formerly known as Tokyo Shibaura Electric Co., Ltd., was formed by the merger of Shibaura Manufa…
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