sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:TW015N120C,S1F
Data Manual:TW015N120C,S1F.pdf
Brand:TOSHIBA
Particular Year:23+
Package:TO-247-3
Delivery Date:New original
Stock: 3000pcs
TW015N120C,S1F N-channel 1200V 100A third generation (built-in SiC Schottky barrier diode) chip design of MOSFET devices
Product Specifications:
FET type: N channel
Technology: SiCFET (Silicon carbide)
Drain-source voltage (Vdss) : 1200 V
Current at 25°C - Continuous Drain (Id) : 100A (Tc)
Drive voltage (Max Rds On, min Rds On) : 18V
On-resistance (Max.) at different ids and Vgs: 20 milliohm @ 50A, 18V
Vgs(th) (Max.) : 5V@11.7mA for different ids
Gate charge (Qg) at different Vgs (Max.) : 158 N@18 V
Vgs (Max.) : +25V, -10V
Input capacitance (Ciss) for different Vds (Max.) : 6000 PF-@800 V
FET function: -
Power dissipation (Max.) : 431W (Tc)
Operating temperature: 175°C
Installation type: Through hole
Supplier device package: TO-247
Package/housing: TO-247-3
Model
Brand
Package
Quantity
Describe
INFINEON
TO-263-7
1000
CoolSiC™ 1200V SiC Trench MOSFET Transistors in TO-263-7 package
INFINEON
TO-263-7
1000
CoolSiC™ 1200V SiC Trench MOSFET Transistors in TO-263-7 package
INFINEON
TO-263-7
1000
CoolSiC™ 1200V SiC Trench MOSFET Transistors in TO-263-7 package
INFINEON
TO-263-7
1000
CoolSiC™ 1200V SiC Trench MOSFET Transistors in TO-263-7 package
INFINEON
TO-247-3
1000
CoolSiC™ 1200V SiC Trench MOSFET Transistors in TO247-3 package
INFINEON
TO-247-3
1000
CoolSiC™ 1200V, 20mΩ SiC Trench MOSFET Transistors in TO247-3 package
INFINEON
TO-247-4
1000
CoolSiC™ 1200V SiC Trench MOSFET Transistors in TO247-4 package
INFINEON
TO-247-4
1000
CoolSiC™ 1200V, 7mΩ SiC Trench MOSFET Transistors in TO247-4 package
INFINEON
TO-247-4
1000
CoolSiC™ 1200V, 20mΩ SiC Trench MOSFET Transistors in TO247-4 package
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