sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:TW015N120C,S1F
Data Manual:TW015N120C,S1F.pdf
Brand:TOSHIBA
Particular Year:23+
Package:TO-247-3
Delivery Date:New original
Stock: 3000pcs
TW015N120C,S1F N-channel 1200V 100A third generation (built-in SiC Schottky barrier diode) chip design of MOSFET devices
Product Specifications:
FET type: N channel
Technology: SiCFET (Silicon carbide)
Drain-source voltage (Vdss) : 1200 V
Current at 25°C - Continuous Drain (Id) : 100A (Tc)
Drive voltage (Max Rds On, min Rds On) : 18V
On-resistance (Max.) at different ids and Vgs: 20 milliohm @ 50A, 18V
Vgs(th) (Max.) : 5V@11.7mA for different ids
Gate charge (Qg) at different Vgs (Max.) : 158 N@18 V
Vgs (Max.) : +25V, -10V
Input capacitance (Ciss) for different Vds (Max.) : 6000 PF-@800 V
FET function: -
Power dissipation (Max.) : 431W (Tc)
Operating temperature: 175°C
Installation type: Through hole
Supplier device package: TO-247
Package/housing: TO-247-3
Model
Brand
Package
Quantity
Describe
TOSHIBA
TO-247-4
4333
SiC MOSFET Through hole N channel 1200 V 20A (Tc) 107W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 36A (Tc) 170W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 40A (Tc) 182W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 100A (Tc) 431W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N Channel 650 V 100A (Tc) 342W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N Channel 650 V 58A (Tc) 156W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N channel 650 V 20A (Tc) 76W (Tc) TO-247-4L (X)
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TOSHIBA (Toshiba), Japans largest semiconductor manufacturer, the second largest integrated motor manufacturer, is affiliated to the Mitsui Group.Toshiba, formerly known as Tokyo Shibaura Electric Co., Ltd., was formed by the merger of Shibaura Manufa…
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