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TW048N65C,S1F Third generation silicon carbide MOSFET devices are designed for switched voltage regulator applications. The MOSFET helps reduce power consumption and increase power density. This is due to silicon carbide (SiC) technology enabling devices to provide higher voltage, faster switching, and lower on-resistance. In addition, the input capacitance (CISS) is 1362 pF (typical value), the low gate input charge (Qg) is 41 nC (typical value) and the drain-source on-resistance (RDS(ON)) is only 48mΩ or 65 Mω (typical value).

Product Specifications:

FET type: N channel

Technology: SiCFET (Silicon carbide)

Drain-source voltage (Vdss) : 650 V

Current at 25°C - Continuous drain (Id) : 40A (Tc)

Drive voltage (Max Rds On, min Rds On) : 18V

On-resistance (Max.) at different ids and Vgs: 65 milliohm @ 20A, 18V

Vgs(th) (Max.) : 5V@1.6mA for different ids

Gate charge (Qg) at different Vgs (Max.) : 41 NC-@18 V

Vgs (Max.) : +25V, -10V

Input capacitance (Ciss) at different Vds (Max.) : 1362 PF-@400 V

FET function: -

Power dissipation (Max.) : 132W (Tc)

Operating temperature: 175°C

Installation type: Through hole

Supplier device package: TO-247

Package/housing: TO-247-3

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  A: all online goods on the shelves can be ordered online, but considering the large liquidity of spot inventory, it is not possible to achieve 100% accuracy at present. In case of any abnormality, you can contact our company online and give the corresponding solution.

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