sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:SiC MOSFET
Brand:Starpower
Particular Year:24+
Package:T2
Delivery Date:New and Original
Stock: 1000pcs
DM170S12TDRB are MOSFET power discrete devices with ultra-low conduction and switching losses. They are designed for applications such as hybrid and electric vehicles.
DM170S12TDRB Features
Package: T2
Current Rating: -
Chip type: SIC
Rated Voltage: 1200V
Circuit structure: Single Phase/H-bridge
Features: TO-247PLUS-4L
Typical Applications
Automotive applications
Hybrid and electric vehicles
Inverters for motor drives
Equivalent Circuit Schematic
Model
Brand
Package
Quantity
Describe
TOSHIBA
TO-247-4
4333
SiC MOSFET Through hole N channel 1200 V 20A (Tc) 107W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 36A (Tc) 170W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 40A (Tc) 182W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 100A (Tc) 431W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N Channel 650 V 100A (Tc) 342W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N Channel 650 V 58A (Tc) 156W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N channel 650 V 20A (Tc) 76W (Tc) TO-247-4L (X)
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Starpower was founded in April 2005, specialising in the design, development, production and sales service of IGBT-based power semiconductor chips and modules, and is currently a leading company in the field of power semiconductor devices in China. He…
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