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The CGH40006S is a 6W Gallium nitride (GaN) high electron mobility transistor (HEMT). CGH40006 operates at a voltage of 28V; Provides a generic; Broadband solutions for a variety of RF and microwave applications. GaN HEMT offers high efficiency; High gain and wide bandwidth capability; This makes the CGH40006 ideal for linear and compression amplifier circuits.

Specifications

Transistor type: HEMT

Technology: GaN

Operating frequency: 2 GHz to 6 GHz

Gain: 13 dB

Transistor polarity: N-Channel

Vds- drain-source breakdown voltage: 120 V

Vgs- Gate source breakdown voltage: -10 V to 2 V

Id- Continuous drain current: 750 mA

Output power: 6.9W

Maximum drain/grid voltage: -

Minimum operating temperature: -40 °C

Maximum operating temperature: + 150°C

Pd- Power dissipation: -

Installation style: SMD/SMT

Package/box: QFN-6

Application: -

Configuration: Single

Development kit: CGH40006S-KIT

Height: 1 mm

Length: 3.15mm

Humidity sensitivity: Yes

Product: GaN HEMTs

Product type: RF JFET Transistors

Typical shutdown delay time: -

Vgs TH-gate source threshold voltage: -3 V

Width: 3.15mm

Unit weight: 2.898g

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