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The CGHV27060MP is a 60 W gallium nitride (GaN) high electron mobility transistor (HEMT) in a small package. Plastic SMT package 4.4mmx 6.5mm. A transistor is a wide-band device with no internal input or output matching; This allows flexibility for a wide frequency range from UHF to 2.7 GHz.

CGHV27060MP is an excellent transistor for ultra-high frequency pulse applications. L-band or low S-band (< 2.7 GHz). In addition; The transistor is ideal for LTE micro-base station amplifiers with an average power of 10 to 15w in efficient topologies such as Class A/B; The Docherty amplifier.

Specifications

Transistor type: HEMT

Technology: GaN

Operating frequency: 2.7GHz

Gain: 18.5 dB

Transistor polarity: N-Channel

Vds- drain-source breakdown voltage: 150 V

Vgs- Gate source breakdown voltage: -10 V to 2 V

Id- Continuous drain current: 6.3A

Output power: 60 W

Maximum drain/grid voltage: -

Pd- Power dissipation: -

Installation style: SMD/SMT

Package/housing: QSOP-20

Application: -

Classes: -

Configuration: Single

Forward transconductance - Minimum: -

Gate/source cut-off voltage: -

Humidity sensitivity: Yes

NF - Noise figure: -

Operating temperature range: -40 °C to +90°C

P1dB - Compression point: -

Product type: RF JFET Transistors

Rds On- drain-source on-resistance: -

Vgs TH-gate source threshold voltage: -3 V

Unit weight: 241.200mg

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