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C3M0045065D - 650V, 45mΩ, 49A, Discrete Silicon Carbide Power MOSFET Transistors in TO-247-3 package

Product Overviews

Wolfspeed extends its Silicon Carbide (SiC) technology leadership with the introduction of 3rd-Generation 650 V MOSFETs, enabling smaller, lighter, and highly-efficient power conversion in an even wider range of power systems. The 650 V MOSFET product family is ideal for applications including high performance industrial power supplies, server/telecom power, electric vehicle charging systems, energy storage systems, uninterruptible power supplies, and battery management systems.

Product Attributes

Technology: SiC  

Mounting Style: Through Hole  

Package / Case: TO-247-3  

Transistor Polarity: N-Channel  

Number of Channels: 1 Channel  

Vds - Drain-Source Breakdown Voltage: 650 V  

Id - Continuous Drain Current: 49 A  

Rds On - Drain-Source Resistance: 45 mOhms  

Vgs - Gate-Source Voltage: - 8 V, + 19 V  

Vgs th - Gate-Source Threshold Voltage: 3.6 V  

Qg - Gate Charge: 63 nC  

Minimum Operating Temperature: - 40 C  

Maximum Operating Temperature: + 175 C  

Pd - Power Dissipation: 176 W  

Channel Mode: Enhancement 

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