sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:MOSFET Transistors
Brand:Wolfspeed
Particular Year:24+
Package:TO-247-4
Delivery Date:New and Original
Stock: 2000pcs
C3M0025065K - 650V N-Channel Enhancement Mode SiC MOSFET Transistors in TO-247-4 package
Product Description
C3M0025065K is 650V N-Channel Enhancement Mode SiC MOSFET Transistors in TO-247-4 package. It is ideal for applications including high performance industrial power supplies, server/telecom power, electric vehicle charging systems, energy storage systems, uninterruptible power supplies, and battery management systems.
Product Attributes
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 97A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 34mOhm @ 33.5A, 15V
Vgs(th) (Max) @ Id 3.6V @ 9.22mA
Gate Charge (Qg) (Max) @ Vgs 112 nC @ 15 V
Vgs (Max) +19V, -8V
Input Capacitance (Ciss) (Max) @ Vds 2980 pF @ 600 V
Power Dissipation (Max) 326W (Tc)
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-4L
Package / Case TO-247-4
Key Features
Low On-State Resistance over Temperature
Fast Diode with ultra low reverse recovery
High Temperature Operation (TJ = 175°C)
Small form factor
Low lead inductance
Low Thermal Impedance
Model
Brand
Package
Quantity
Describe
Wolfspeed
TO-247-3
2000
650V, 60mΩ, 37A Silicon Carbide Power MOSFET Transistors TO-247-3
Wolfspeed
TO-247-4
2000
650V, 60mΩ, 37A Silicon Carbide Power MOSFET Transistors TO-247-4
Wolfspeed
TO-247-3
2000
650V, 45mΩ, 49A Silicon Carbide Power MOSFET Transistors TO-247-3
Wolfspeed
TO-263-7
2000
650V, 45mΩ, 47A, Silicon Carbide Power MOSFET Transistors TO-263-7
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Wolfspeed (NYSE: NYSE) is a market leader in the global adoption of silicon carbide and GaN technologies. We provide industry-leading solutions for efficient energy consumption and a sustainable future, and our product portfolio includes silicon carbi…
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