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VS-3C08EV07T-M3/I - 650V, 8A Power SiC Gen 3 Merged PIN Schottky Diode

Product Description

VS-3C08EV07T-M3/I - Wide band gap SiC based 650 V Schottky diode, designed for high performance and ruggedness. Optimum choice for high speed hard switching and efficient operation over a wide temperature range, it is also recommended for all applications suffering from Silicon ultrafast recovery behavior. Typical applications include AC/DC PFC and DC/DC ultra high frequency output rectification in FBPS and LLC converters.

Product Features

Creepage and clearance distance 2.8 mm minimum

Very low profile – typical height of 1.3 mm

Majority carrier diode using Schottky technology on SiC wide band gap material

Improved VF and efficiency by thin wafer technology

Positive VF temperature coefficient for easy paralleling

Virtually no recovery tail and no switching losses

Temperature invariant switching behavior

175 °C maximum operating junction temperature

MPS structure for high ruggedness to forward current surge events

Meets JESD 201 class 2 whisker test

Meet MSL level 1, per J-STD-020, LF maximum peak of 260 °C

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