sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:GCMS040B120S1-E1
Brand:SemiQ
Particular Year:24+
Package:SOT-227-4
Delivery Date:New and Original
Stock: 1000pcs
The SemiQ GCMS040B120S1-E1 1200V SiC COPACK Power Module features a high-speed switching SiC MOSFET that is simple to drive, very rugged, and easy to install.The GCMS040B120S1-E1 provides a zero-reverse-recovery continuous-current SiC SBD with low switching losses and a low enclosure thermal resistance.The SemiQ The GCMS040B120S1-E1 power supply module has low QRR at high temperatures and can be mounted directly to a heat sink in an isolated package.
Specifications
FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Drain-source voltage (Vdss): 1200 V
Current at 25°C - Continuous Drain (Id): 57A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
On Resistance (Max) at Different Id, Vgs: 52 mOhm @ 40A, 20V
Vgs(th) at different Id (max): 4V @ 10mA
Gate Charge (Qg) at Vgs (max): 124 nC @ 20 V
Vgs (max): +25V, -10V
Input capacitance (Ciss) at different Vds (max): 3110 pF @ 1000 V
Power Dissipation (Max): 242W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227
Package/Housing: SOT-227-4, miniBLOC
Applications
Photovoltaic inverters
Battery chargers
Server power supplies
Energy storage systems
Model
Brand
Package
Quantity
Describe
INFINEON
Module
3000
Silicon Carbide MOSFET Modules - 3.3kV, CoolSiC™ MOSFET Half Bridge Module
INFINEON
Module
3000
Silicon Carbide MOSFET Modules - 3.3kV, CoolSiC™ MOSFET Half Bridge Module
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