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Service Telephone:86-755-83294757
Trade Name:PMZ290UNE2
Data Manual:PMZ290UNE2.pdf
Brand:Nexperia
Particular Year:21+
Package:SOT-883
Delivery Date:New and Original
Stock: 10000pcs
The PMZ290UNE2 N-channel MOSFET is an enhancement mode field effect transistor (FET) with low threshold voltage and fast switching. These MOSFETs are available in 2kV HBM and greater than 2kV HBM ESD-protected versions.The PMZ290UNE2 MOSFETs are available in a small 1.0mm × 0.6mm × 0.48mm leadless DFN1006-3 (SOT883) SMD plastic package with trench MOSFET technology. Applications include relay drivers, high-speed line drivers, low-side load switches, and switching circuits.
Product Attributes
Manufacturer: Nexperia
Product Category: MOSFETs
Technology: Si
Mounting Style: SMD/SMT
Package / Case: DFN-1006-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds-Drain-source breakdown voltage: 20 V
Id-Continuous drain current: 1.2 A
Rds On-drain on-resistance: 320 mOhms
Vgs - gate-source voltage: - 8 V, + 8 V
Vgs th-Gate-source threshold voltage: 450 mV
Qg-gate charge: 800 pC
Minimum operating temperature: - 55 C
Maximum operating temperature: + 150 C
Pd-Power dissipation: 715 mW
Channel mode: Enhancement
Configuration: Single
Fall-off time: 4 ns
Product type: MOSFET
Rise Time: 10 ns
Factory Package Quantity: 10000
Sub Category: MOSFETs
Transistor Type: 1 N-Channel
Typical Off Delay Time: 11 ns
Typical turn-on delay time: 6 ns
Unit weight: 0.800 mg
Applications
Relay drivers
High speed line drivers
Low voltage side load switches
Switching circuits
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