sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:DGD05473FN-7
Data Manual:DGD05473FN-7.pdf
Brand:Diodes
Particular Year:23+
Package:10-WFDFN
Delivery Date:New and Original
Stock: 8000pcs
DGD05473FN-7 is a high-frequency gate driver capable of driving N-channel MOSFETs. The rated voltage of the floating high-voltage side driver can reach up to 50V.
DGD05473FN-7 logic input is compatible with standard TTL and CMOS levels (as low as 3.3V) and can easily interface with MCU. The UVLO on the high and low sides will protect the power supply losses of MOSFETs. To protect MOSFETs, cross conduction prevention logic prevents both HO and LO outputs from conducting simultaneously.
Product Features
50V floating high-voltage side driver
Drive two N-channel MOSFETs in a half bridge configuration
1.5A source/2.5A sink output current capacity
Including internal bootstrap diode
Under voltage locking of high-voltage and low-voltage side drivers
Delay matching maximum 5ns
The typical propagation delay is 20ns
Logic inputs (HIN, LIN, and EN) 3.3V capability
Ultra low standby current (<1 µ A)
Extended temperature range: -40 ° C to+125 ° C
Product Application
DC-DC converter
Motor control device
Battery powered manual tools
ECig devices
Class D power amplifier
Model
Brand
Package
Quantity
Describe
INFINEON
DSO-16
2000
1200V single high-side gate driver IC with active Miller clamp, DESAT and short circuit clamping
INFINEON
DSO-24
2000
Three phase gate driver IC bare die with integrated bootstrap diode and over current protection
A: all online goods on the shelves can be ordered online, but considering the large liquidity of spot inventory, it is not possible to achieve 100% accuracy at present. In case of any abnormality, you can contact our company online and give the corresponding solution.
A: our self-supporting products are from cooperative domestic and foreign original factories or authorized agents, and the source can be traced to ensure the original and authentic products.
A: at present, our self-employed brands TI,ST,ADI,NXP,LATTICE,CYPRESS,INFINEON,XILINX and other first-line brands. Other channels are the original factory and agency channels. If necessary, we can communicate and confirm according to the specific brand and model.
A: You can inquire through the website, or by phone and email.
A: the delivery date is marked in most commodity information. You can estimate the delivery time of the commodity according to the delivery date. The specific arrival time depends on the warehouse where the commodity is located and the logistics mode you choose.
A: you can issue ordinary invoices for individual users or special VAT invoices for enterprise users.
Founded in 1966, Diodes Inc. is a Nasdaq-listed company in the United States. It is a transfer investment company of Dunnan Technology. It is mainly engaged in the manufacture and production of discrete semiconductor components. Diodes Inc. has a part…
PI7C9X3G1632GPDHFCE
The PI7C9X3G1632GPDHFCE is a PCIe GEN3 packet switch that supports 32 GEN3 SERDES and has 16 ports. The architecture of a PCIe packet switch allows for flexible port configuration by assigning a variable channel width to each port. A basic unit of the…PI7C9X3G816GPAHFCE
The PI7C9X3G816GPAHFCE is a PCIe Gen3 packet switch that supports 16-channel GEN3 SERDES and uses a flexible 8-port configuration. The architecture of a PCIe packet switch allows for flexible port configuration by assigning a variable channel width to…DMWSH120H43SM4
The DMWSH120H43SM4 is a 1200V, 72.7A single n-channel silicon carbide power MOSFET in a 4-pin TO-247 package designed TO minimize on-resistance and maintain excellent switching performance. These power MOSFETs are ideal for use in EV high-power DC-DC …DMWSH120H43SM3
The DMWSH120H43SM3 is a 1200V, 72.7A single n-channel silicon carbide power MOSFET designed to minimize on-resistance and maintain excellent switching performance. These 1200V power MOSFETs are ideal for use in EV high-power DC-DC converters, EV charg…DMWSH120H90SM3
The DMWSH120H90SM3 is a 1200V, 41A silicon carbide power MOSFET designed to minimize on-resistance and maintain excellent switching performance. These 1200V power MOSFETs are ideal for use in EV high-power DC-DC converters, EV charging systems, solar …DMWSH120H90SM3Q
The DMWSH120H90SM3Q is a 1200V, 41A N-channel silicon carbide power MOSFET designed to minimize on-resistance and maintain excellent switching performance. The MOSFETs are ideal for EV high-power DC-DC converters, EV charging systems, solar inverters,…Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
CopyRight ©2022 Copyright belongs to Mingjiada Yue ICP Bei No. 05062024-12
Official QR Code
Links: