sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:GS61004B-TR
Data Manual:GS61004B-TR.pdf
Brand:GaN Systems
Particular Year:23+
Package:GaNPX
Delivery Date:New and Original
Stock: 1000pcs
The GS61004B-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown, high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging. Island Technology® cell layout realizes high-current die and high yield. GaNPX® packaging enables low inductance & low thermal resistance in a small package. The GS61004B-TR is a bottom-cooled transistor that offer very low junction-to-case thermal resistance for demanding high power applications.
Features
• 100V enhancement mode power transistor
• Bottom-side cooled configuration
• RDS(on) = 16 mΩ
• IDS(max) = 38 A
• Ultra-low FOM Island Technology® die
• Low inductance GaNPX® package
• Simple gate drive requirements (0 V to 6 V)
• Transient tolerant gate drive (-20 V / +10 V)
• Very high switching frequency (> 10 MHz)
• Fast and controllable fall and rise times
• Reverse current capability
• Zero reverse recovery loss
• Small 4.6 x 4.4 mm2 PCB footprint
• RoHS 3 (6+4) compliant
Applications
• Enterprise and networking power
• Uninterruptable power supplies
• Industrial motor drives
• Solar power
• Fast battery charging
• Class D audio amplifiers
• Smart home
• Wireless Power Transfer
Model
Brand
Package
Quantity
Describe
INFINEON
PG-DSO-20
2000
CoolGaN™ Power Transistor 650V G5 for ultimate efficiency, power density and reliability
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As a global leader in GaN power semiconductors, GaN Systems is committed to providing customers around the world with the industrys most complete and reliable portfolio of GaN power transistors to drive higher efficiency, higher power density, and mor…
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