sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:GS61008P-MR
Data Manual:GS61008P-MR.pdf
Brand:GaN Systems
Particular Year:23+
Package:GaNPX
Delivery Date:New and Original
Stock: 1000pcs
The GS61008P-MR is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging. Island Technology® cell layout realizes high-current die and high yield. GaNPX® packaging enables low inductance & low thermal resistance in a small package. The GS61008P-MR is a bottom-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.
Features
• 100 V enhancement mode power transistor
• Bottom-side cooled configuration
• RDS(on) = 7 mΩ
• IDS(max) = 90 A
• Ultra-low FOM die
• Low inductance GaNPX® package
• Simple gate drive requirements (0 V to 6 V)
• Transient tolerant gate drive (-20 V / +10 V)
• Very high switching frequency (> 10 MHz)
• Fast and controllable fall and rise times
• Reverse current capability
• Zero reverse recovery loss
• Small 7.6 x 4.6 mm2 PCB footprint
• Source Sense (SS) pin for optimized gate drive
• RoHS 3 (6 + 4) compliant
Applications
• Energy Storage Systems
• AC-DC Converters (secondary side)
• Uninterruptable Power Supplies
• Industrial Motor Drives
• Fast Battery Charging
• Class D Audio amplifiers
• Traction Drive
• Robotics
• Wireless Power Transfer
Model
Brand
Package
Quantity
Describe
INFINEON
PG-DSO-20
2000
CoolGaN™ Power Transistor 650V G5 for ultimate efficiency, power density and reliability
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As a global leader in GaN power semiconductors, GaN Systems is committed to providing customers around the world with the industrys most complete and reliable portfolio of GaN power transistors to drive higher efficiency, higher power density, and mor…
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