sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:GS66516B-TR
Data Manual:GS66516B-TR.pdf
Brand:GaN Systems
Particular Year:23+
Package:GaNPX
Delivery Date:New and Original
Stock: 1000pcs
The GS66516B-TR is an enhancement mode GaN on silicon power transistor. The GS66516B-TR is a bottom-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.
Features
• 650 V enhancement mode power transistor
• Bottom-side cooled configuration
• RDS(on) = 25 mΩ
• IDS(max) = 60 A
• Ultra-low FOM die
• Low inductance GaNPX® package
• Simple drive requirements (0 V to 6 V)
• Transient tolerant gate drive (-20 V / +10 V)
• Very high switching frequency (> 10 MHz)
• Fast and controllable fall and rise times
• Reverse current capability
• Zero reverse recovery loss
• Small 11 x 9 mm2 PCB footprint
• Source Sense (SS) pins for optimized gate drive
• Dual Gate Pins for optimal paralleling
• RoHS 3 (6 + 4) compliant
Applications
• AC-DC Converters
• DC-DC Converters
• Bridgeless Totem Pole PFC
• Inverters
• Energy Storage Systems
• On Board Battery Chargers
• Uninterruptable Power Supplies
• Solar Energy
• Industrial Motor Drives
• Laser Drivers
• Traction Drive
• Wireless Power Transfer
Model
Brand
Package
Quantity
Describe
INFINEON
PG-DSO-20
2000
CoolGaN™ Power Transistor 650V G5 for ultimate efficiency, power density and reliability
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As a global leader in GaN power semiconductors, GaN Systems is committed to providing customers around the world with the industrys most complete and reliable portfolio of GaN power transistors to drive higher efficiency, higher power density, and mor…
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