sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:2ED2109S06F
Data Manual:2ED2109S06F.pdf
Brand:INFINEON
Particular Year:23+
Package:8-SOIC
Delivery Date:New and Original
Stock: 1000pcs
2ED2109S06F is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.
Summary of Features
Operating voltages (VS node) upto + 650 V
Negative VS transient immunity of 100 V
Integrated ultra-fast, low resistance bootstrap diode, lower the BOM cost
Floating channel designed for bootstrap operation
Independent under voltage lockout (UVLO) for both channels
IN, /SD logic input, shutdown input turns off both channels
Internal 540 ns dead time
740 / 200 ns propagation delay
Maximum supply voltage of 25 V
Logic operational up to –11 V on VS Pin
Negative voltage tolerance on inputs of –5 V
The floating channel can be used to drive an N-channel MOSFET, SiC MOSFET or IGBT in the high side configuration
Applications
Home appliances
Motor control and drives
Power tools
Switched mode power supplies (SMPS)
Model
Brand
Package
Quantity
Describe
INFINEON
DSO-16
2000
1200V single high-side gate driver IC with active Miller clamp, DESAT and short circuit clamping
INFINEON
DSO-24
2000
Three phase gate driver IC bare die with integrated bootstrap diode and over current protection
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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