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The 2EDL8033G3C is designed to drive both the high-side and low-side MOSFETs in a half-bridge configuration.The floating high-side driver is capable of driving high-side MOSFETs with operating voltages up to 120 V. Version 4 offers a 4 A current capability, while version 3 offers a 3 A current capability. The high-side bias voltage is generated by bootstrap technology using an integrated bootstrap diode. The driver inputs are TTL logic compatible and can withstand input common-mode swings from -10 V to 20 V. Independent inputs allow independent control of the high-side and high-side MOSFETs. Separate inputs allow independent control of the high-side and low-side domains. Undervoltage lockout (UVLO) on the high-side and low-side supplies forces the corresponding outputs low.

Product Attributes

Driver Configuration: Half Bridge

Channel Type: Independent

Number of Drivers: 2

Gate Type: N-Channel, P-Channel MOSFETs

Voltage - Supply: 8V ~ 17V

Current - Peak Output (Pour In, Pull Out): 3A, 6A

Input Type: Non-Inverting

High Side Voltage - Maximum (Bootstrap): 120 V

Rise/Fall Time (typical): 4.6ns, 4.4ns

Operating Temperature: -40°C ~ 125°C (TJ)

Mounting Type: Surface Mount

Package/Shell: 10-VFDFN Exposed Pad

Supplier Device Package: PG-VSON-10-4

Applications

● Telecom/Datacom Half and Full Bridge Power Converters

● Current-fed push-pull converters

● Buck converters

● Dual switch forward converters

● Active Clamp Forward Converters

● Class D amplifiers

● DC motor drivers

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