sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:AUIRF8739L2TR
Data Manual:AUIRF8739L2TR.pdf
Brand:INFINEON
Particular Year:21+
Package:DirectFET-L8
Delivery Date:New and Original
Stock: 5000pcs
Description:AUIRF8739L2 Surface mount type N-channel 40 V 57A (Ta), 545A (Tc) 3.8W (Ta), 340W (Tc) DirectFET™ isometric L8
Product Properties
Category Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Tape and Reel (TR) Cut Tape (CT)
Product Status On Sale
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain Source Voltage (Vdss) 40 V
Current at 25°C - Continuous Drain (Id) 57A (Ta), 545A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10 V
On-resistance (max) at different Id, Vgs 0.6 milliohm @ 195A, 10V
Vgs(th) at different Id (max) 3.9V @ 250µA
Gate Charge (Qg) at different Vgs (max) 562 nC @ 10 V
Vgs (max) 40V
Input capacitance (Ciss) at different Vds (max) 17890 pF @ 25 V
FET Function -
Power dissipation (max) 3.8W (Ta), 340W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DirectFET™ Isometric L8
Package/Case DirectFET™ Isometric L8
Model
Brand
Package
Quantity
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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